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Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

Temperature dependence of the nonlinear plasma resonance in gated two-dimensional semiconductor conduction channels

(1) Rudin, S a

a U S ARMY RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC RADIATION; ELECTRON FLUID; HIGH MOBILITY CHANNELS; HYDRODYNAMIC MODEL; PLASMA RESONANCE; QUALITY FACTORS; SEMICONDUCTOR CONDUCTION; SHORT CHANNELS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TERAHERTZ RANGE; TRANSPORT COEFFICIENT;

BOLTZMANN EQUATION; ELECTROMAGNETIC WAVES; ELECTRON MOBILITY; ELECTRON OPTICS; HIGH ELECTRON MOBILITY TRANSISTORS; TEMPERATURE DISTRIBUTION; TERAHERTZ WAVES;

RESONANCE;

EID: 77954070236 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3455993 Document Type: Article

Times cited : (21)

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