InP- and GaAs-based plasmonic high-electron-mobility transistors for room-temperature ultrahigh-sensitive terahertz sensing and imaging

IEEE Sensors Journal

Volumn 13, Issue 1, 2013, Pages 89-99

  Watanabe, Takayuki ^a   Boubanga Tombet, Stephane A ^a,b   Tanimoto, Yudai ^a   Fateev, Denis ^c   Popov, Viacheslav ^c   Coquillat, Dominique ^d   Knap, Wojciech ^d   Meziani, Yahya M ^e   Wang, Yuye ^f,g   Minamide, Hiroaki ^f   Ito, Hiromasa ^f   Otsuji, Taiichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c SARATOV STATE UNIVERSITY   (Russian Federation)

^d UNIV MONTPELLIER   (France)

^e UNIVERSITY OF SALAMANCA   (Spain)

^f RIKEN   (Japan)

^g TIANJIN UNIVERSITY   (China)

Author keywords

Asymmetry; Detection; High electron mobility transistor (HEMT); Imaging; Plasmon; Sensing; Terahertz

Indexed keywords

ELECTRON MOBILITY; ERROR DETECTION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IMAGING TECHNIQUES; INDIUM PHOSPHIDE; PLASMONICS; PLASMONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; TERAHERTZ WAVES;

ASYMMETRY; DETECTION CHARACTERISTICS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HIGHLY SENSITIVE DETECTIONS; SENSING; SENSING AND IMAGING; TERA HERTZ;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84879872278     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2012.2225831     Document Type: Article

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