Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide

ACS Applied Materials and Interfaces

Volumn 7, Issue 15, 2015, Pages 8268-8274

  Jin, Sung Hun ^a   Kang, Seung Kyun ^b   Cho, In Tak ^c   Han, Sang Youn ^b,e   Chung, Ha Uk ^b   Lee, Dong Joon ^b   Shin, Jongmin ^c   Baek, Geun Woo ^a   Kim, Tae Il ^d   Lee, Jong Ho ^c   Rogers, John A ^b  

^a SolarLight Ltd   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

^c Seoul National University   (South Korea)

^d Sungkyunkwan University   (South Korea)

^e Samsung Display Co   (South Korea)

Author keywords

a IGZO; dissolution; inverter; PVA; ring oscillators; transient electronics

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SEMICONDUCTORS; DEIONIZED WATER; DISSOLUTION; FILMS; GALLIUM; IMPLANTS (SURGICAL); INDIUM; MOLYBDENUM OXIDE; OHMIC CONTACTS; POLYVINYL ALCOHOLS; SALINE WATER; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE; THIN FILM CIRCUITS; THIN FILMS; ZINC; ZINC OXIDE;

A-IGZO; INVERTER; PVA; RING OSCILLATOR; TRANSIENT ELECTRONICS;

THIN FILM TRANSISTORS;

BIOMATERIAL; GALLIUM; GALLIUM OXIDE; INDIUM; INDIUM OXIDE; WATER; ZINC OXIDE;

CHEMISTRY; DEVICE FAILURE ANALYSIS; EQUIPMENT DESIGN; MATERIALS TESTING; SEMICONDUCTOR; SOLUBILITY; SYNTHESIS;

BIOCOMPATIBLE MATERIALS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; MATERIALS TESTING; SOLUBILITY; TRANSISTORS, ELECTRONIC; WATER; ZINC OXIDE;

EID: 84928537363     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b00086     Document Type: Article

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