Development of source/drain electrodes for amorphous indium gallium zinc oxide thin film transistors

Digest of Technical Papers - SID International Symposium

Volumn 44, Issue 1, 2013, Pages 640-643

  Chen, Yuting ^a   Wu, Jie ^a   Dong, Chengyuan ^a   Shi, Junfei ^a   Zhan, Runze ^a   Chiang, Cheng Lung ^b   Chen, Po Lin ^b   Lai, Tzu Chieh ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b Shenzhen China Star Optoelectronics Technology Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ELECTRODES; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; AQUEOUS AMMONIA; ETCHING PROPERTIES; METAL MATERIALS; SOURCE/DRAIN ELECTRODES;

AMORPHOUS MATERIALS;

EID: 84905234257     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1002/j.2168-0159.2013.tb06292.x     Document Type: Article

References (14)

1. 4 ", Thin Solid Films 486, 38-41 (2005).
2. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and, D. A. Keszler, " High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer ", Appl. Phys. Lett. 86, 013503 (2005).
3. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and, H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", Nature 432, 488-492 (2004).
4. G. H. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, W. J. Park, and, H. J. Kim, " Formation mechanism of solution-processed nanocrystalline InGaZnO thin film as active channel layer in thin-film transistor ", J. Electrochem. Soc. 156, H7-H9 (2009).
5. G. H. Kim, H. S. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, and, H. J. Kim, " Inkjet-printed InGaZnO thin film transistor ", Thin Solid Films 517, 4007-4010 (2009).
6. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono, " High-mobility thin-film transistor with amorphous InGaZnO 4 channel fabricated by room temperature rf-magnetron sputtering ", Appl. Phys. Lett. 89, 112123 (2006).
7. M. Kim, J.H. Jeong, H.J. Lee, T.K. Ahn, H.S. Shin, J.S. Park, J.K. Jeong, Y.G. Mo, H.D. Kim, " High mobility bottom gate InGaZnO thin film transistors with Si Ox etch stopper ", Appl. Phys. Lett. 90, 212114 (2007).
8. H.Q. Chiang, B.R. McFarlane, D. Hong, R.E. Presley, J.F. Wager, " Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors ", J. Non-Cryst. Solids 354, 2826 (2008).
9. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono, " Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor ", Appl. Phys. Lett. 94, 133502 (2009).
10. C.-Y. Lee, C. Chang, W.-P. Shih, C.-L. Dai, " Wet etching rates of InGaZnO for the fabrication of transparent thin-film transistors on plastic substrates ", Thin Solid Films 518, 3992-3998 (2010).
11. J.E.A.M. van den Meerakker, P.C. Baarslag, and, M. Scholten, " On the mechanism of ITO etching in Halogen Acids: The influence of Oxidizing Agents ", Electrochem. Soc. 142, 2321-2325 (1995).
12. T.H. Tsai, Y.F. Wu, " Organic Acid Mixing to Improve ITO Film Etching in Flat Panel Display Manufacturing ", J. Electrochem. Soc. 153, C86-C90 (2006).
13. J.H. Seo, S.-H. Lee, B.-H. Seo, J.-H. Jeon, H. Choe, K.-W. Lee, " Wet Etching of Gallium Indium Zinc Oxide (GIZO) Semiconductor for Thin Film Transistor Application ", SID 08 DIGEST 1439-1441 (2008).
14. P.S. Yun, J. Koike, " Metal Reaction Doping and Ohmic Contact with Cu-Mn Electrode on Amorphous In-Ga-Zn-O Semiconductor ", J. Electrochem. Soc. 158, H1034-H1040 (2011).