Amorphous InGaZnO 4 films: Gas sensor response and stability

Sensors and Actuators, B: Chemical

Volumn 171-172, Issue , 2012, Pages 1166-1171

  Yang, Dae Jin ^a   Whitfield, George C ^a   Cho, Nam Gyu ^b   Cho, Pyeong Seok ^a   Kim, Il Doo ^b   Saltsburg, Howard M ^a   Tuller, Harry L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Amorphous semiconductor; Hydrogen gas sensor; NOx gas sensor; Semiconducting metal oxides

Indexed keywords

ADSORPTION/DESORPTION; AMORPHOUS INGAZNO; CHEMICAL INHOMOGENEITIES; CYCLIC EXPOSURES; DC RESISTANCE; DRY AIR; GAS PARTIAL PRESSURE; HYDROGEN GAS SENSORS; HYSTERETIC BEHAVIOR; MICRO-STRUCTURAL; MODEL SENSORS; MONITORING CHANGE; NOX GAS SENSOR; OPERATING TEMPERATURE; POLYCRYSTALLINE; POWER-LAW DEPENDENCES; RESPONSE CHARACTERISTIC; SEMICONDUCTING METAL OXIDES; SENSOR RESPONSE; SENSOR TESTS; TEMPERATURE RANGE; TRACE CONCENTRATIONS;

AMORPHOUS MATERIALS; AMORPHOUS SEMICONDUCTORS; GAS DETECTORS; GRAIN BOUNDARIES; HYDROGEN; NITROGEN OXIDES; REACTION RATES;

CHEMICAL SENSORS;

EID: 84864276859     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2012.06.057     Document Type: Article

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