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Materials Science in Semiconductor Processing

Volumn 35, Issue , 2015, Pages 109-114

A first-principles study of transport properties of a gallium arsenide nanoribbon-based molecular device

(1) Chandiramouli, R a

a SASTRA UNIVERSITY (India)

Author keywords

Gallium arsenide; Molecular device; Nanoribbon; Transmission pathways; Transport property

Indexed keywords

BIAS VOLTAGE; CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; ELECTRON DENSITY MEASUREMENT; ELECTRONS; GALLIUM; NANORIBBONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; TRANSPORT PROPERTIES;

APPLIED BIAS VOLTAGE; DENSITY OF STATE; ELECTRONIC TRANSPORT PROPERTIES; ENERGY INTERVAL; FIRST-PRINCIPLES STUDY; MOLECULAR DEVICE; NANORIBBON; TRANSMISSION SPECTRUMS;

GALLIUM ARSENIDE;

EID: 84925070364 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2015.02.076 Document Type: Article

Times cited : (11)

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