Influence of substrate temperature on the shape of GaAs nanowires grown by Au-assisted MOVPE

Journal of Crystal Growth

Volumn 312, Issue 10, 2010, Pages 1676-1682

  Bouravleuv, A D ^a,b,c   Sibirev, N V ^b   Statkute, G ^c   Cirlin, G E ^a,b,d   Lipsanen, H ^c   Dubrovskii, V G ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c AALTO UNIVERSITY   (Finland)

^d INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

Author keywords

A1. MOVPE; A1. Vapor liquid solid mechanism; B2. GaAs nanowires

Indexed keywords

B2. GAAS NANOWIRES; GAAS; GROWTH PARAMETERS; KEY PROCESS; LATERAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; SUBSTRATE TEMPERATURE; TEMPERATURE BEHAVIOR; THEORETICAL MODELS; THEORETICAL RESULT; VAPOR-LIQUID-SOLID MECHANISM;

CRYSTAL GROWTH; GALLIUM ARSENIDE; LIQUIDS; METALLORGANIC VAPOR PHASE EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPORS;

GALLIUM ALLOYS;

EID: 77950188257     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.010     Document Type: Article

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