Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Microelectronics Journal

Volumn 39, Issue 8, 2008, Pages 1070-1074

  Hazdra, P ^a   Voves, J ^a   Oswald, J ^b   Kuldova K ^b   Hospodkova A ^b   Hulicius, E ^b   Pangrac J ^b  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

GaAs; InAs; MOVPE; Photoluminescence; Photomodulated reflectance; Quantum dots

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH; EPITAXIAL GROWTH; METALS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEPARATION; WETTING;

APPLIED (CO); CHARACTERISATION; ELSEVIER (CO); INAS/GAAS QUANTUM DOTS; LOW PRESSURE (LP); METAL ORGANIC (MO); MICROSCOPIC TECHNIQUES; NUMERICAL SIMULATIONS; OPTICAL (PET) (OPET); OPTICAL CHARACTERISATION; PHOTOMODULATED REFLECTANCE SPECTROSCOPY; PHOTOREFLECTANCE SPECTROSCOPY (PRS); QUANTUM DOTS (QDS); SPACER THICKNESSES; VAPOUR PHASE EPITAXY; WETTING LAYER (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 46149086330     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.06.005     Document Type: Article

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