Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy

Superlattices and Microstructures

Volumn 24, Issue 1, 1998, Pages 1-6

  Takebe, T ^a,b   Watanabe, T ^a,c   Fujita, K ^a  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

Aluminium gallium arsenide; Crystal facet; Diffusion length; Gallium arsenide; Molecular beam epitaxy; Patterned substrate; Quantum dot; Quantum wire

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

CRYSTAL FACET; PATTERNED SUBSTRATES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031619313     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1998.0572     Document Type: Article

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