Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 33, Issue 1, 2015, Pages

  Liu, Shi ^a   Zhao, Xin Hao ^a   Campbell, Calli ^a   Dinezza, Michael J ^a   Zhao, Yuan ^a   Zhang, Yong Hang ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; CADMIUM TELLURIDE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; INDIUM ANTIMONIDES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SOLAR CELLS; SUBSTRATES; X RAY DIFFRACTION;

DOUBLE HETEROSTRUCTURES; HGCDTE FOCAL PLANE ARRAYS; HIGH-EFFICIENCY SOLAR CELLS; MINORITY CARRIER LIFETIMES; MISFIT DISLOCATION DENSITIES; PHOTOLUMINESCENCE INTENSITIES; ROOM TEMPERATURE; VIRTUAL SUBSTRATES;

CARRIER LIFETIME;

EID: 84923675828     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4905289     Document Type: Article

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