Issues in HgCdTe research and expected progress in infrared detector fabrication

Journal of Electronic Materials

Volumn 42, Issue 11, 2013, Pages 3349-3358

  Gravrand, O ^a   Destefanis, G ^a   Bisotto, S ^a   Baier, N ^a   Rothman, J ^a   Mollard, L ^a   Brellier, D ^a   Rubaldo, L ^b   Kerlain, A ^b   Destefanis, V ^b   Vuillermet, M ^b  

^a CEA LETI   (France)

^b SOFRADIR   (France)

Author keywords

10 m pitch; APD; CdZnTe; dual band; HgCdTe; HOT; SWAP

Indexed keywords

APD; CDZNTE; DUAL BAND; HGCDTE; HOT; SWAP;

PHOTODIODES; TEMPERATURE;

INFRARED DETECTORS;

EID: 84887202330     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2803-9     Document Type: Article

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