The impact of substrate resistivity on ESD protection devices

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 357-364

  Smedes, T ^a   Heringa, A ^b   Van Zwol, J ^a   De Jong, P C ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

CMOS technology; Conductivity; Diodes; Electrostatic discharge; Failure analysis; Leakage current; Protection; Silicides; Substrates; Testing

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIODES; ELECTRIC CONDUCTIVITY; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; FAILURE ANALYSIS; LEAKAGE CURRENTS; SILICIDES; TESTING;

CMOS TECHNOLOGY; ESD PROTECTION DEVICES; FAILURE MECHANISM; PROTECTION; SUBSTRATE RESISTIVITY; SUBSTRATE TYPES;

SUBSTRATES;

EID: 84923363793     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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