|
Volumn 3, Issue 6, 2015, Pages 1389-1396
|
Semiconducting properties of spinel tin nitride and other IV3N4 polymorphs
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CALCULATIONS;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
ELECTROMAGNETIC WAVE ABSORPTION;
ELECTRONIC STRUCTURE;
ENERGY GAP;
HALL MOBILITY;
IONIZATION;
LIGHT ABSORPTION;
NITRIDES;
THIN FILMS;
TIN;
ELECTRON CONCENTRATION;
ELECTRON EFFECTIVE MASS;
FIRST-PRINCIPLES THEORY;
OPTOELECTRONIC APPLICATIONS;
POLYCRYSTALLINE THIN FILM;
SEMI-CONDUCTING PROPERTY;
SEMICONDUCTOR PROPERTIES;
THERMOCHEMICAL PROPERTIES;
IONIZATION POTENTIAL;
|
EID: 84922463657
PISSN: 20507534
EISSN: 20507526
Source Type: Journal
DOI: 10.1039/c4tc02528h Document Type: Article |
Times cited : (53)
|
References (56)
|