Electronic structure of spinel-type nitride compounds Si3N 4, Ge3N4, and Sn3N4 with tunable band gaps: Application to light emitting diodes

Physical Review Letters

Volumn 111, Issue 9, 2013, Pages

  Boyko, T D ^a   Hunt, A ^a   Zerr, A ^b   Moewes, A ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

^b UNIVERSITÉ PARIS 13   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC BAND GAPS; EXCITON-BINDING ENERGY; LIGHTING APPLICATIONS; MULTI-FUNCTIONAL MATERIALS; OPTOELECTRONIC PROPERTIES; THEORETICAL METHODS; TUNABLE BAND-GAP; VISIBLE WAVELENGTHS;

BINDING ENERGY; ELECTRONIC STRUCTURE; ENERGY GAP; EXCITONS; GERMANIUM; LIGHT EMITTING DIODES; MATERIALS PROPERTIES; NITRIDES; OPTOELECTRONIC DEVICES; SILICON; SOLID SOLUTIONS; TIN;

COMPLEXATION;

GERMANIUM; NITROGEN DERIVATIVE; SILICON DERIVATIVE; SILICON NITRIDE; TIN DERIVATIVE;

CHEMISTRY; DEVICES; ELECTRIC CONDUCTIVITY; ILLUMINATION; PROCEDURES; SEMICONDUCTOR; SPECTROMETRY; X RAY ABSORPTION SPECTROSCOPY;

ELECTRIC CONDUCTIVITY; GERMANIUM; LIGHTING; NITROGEN COMPOUNDS; SEMICONDUCTORS; SILICON COMPOUNDS; SPECTROMETRY, X-RAY EMISSION; TIN COMPOUNDS; X-RAY ABSORPTION SPECTROSCOPY;

EID: 84884232694     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.111.097402     Document Type: Article

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