Stability and electronic structure of the low-Σ grain boundaries in CdTe: A density functional study

New Journal of Physics

Volumn 17, Issue , 2015, Pages

  Park, Ji Sang ^a   Kang, Joongoo ^b   Yang, Ji Hui ^a   Metzger, Wyatt ^a   Wei, Su Huai ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

grain bondaries; II VI semiconductors; impurity and defect levels in semiconductors; radiation effects in semiconductors

Indexed keywords

CADMIUM TELLURIDE; CALCULATIONS; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; II-VI SEMICONDUCTORS; RADIATION EFFECTS; ZINC SULFIDE;

DENSITY-FUNCTIONAL STUDY; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; IMPURITY AND DEFECTS; MODEL SYSTEM; RADIATION EFFECTS IN SEMICONDUCTORS; RELATIVE STABILITIES; ZINC BLENDE; ZINCBLENDE SEMICONDUCTORS;

DANGLING BONDS;

EID: 84922262120     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/17/1/013027     Document Type: Article

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