Performance analysis of boron nitride embedded armchair graphene nanoribbon metal-oxide-semiconductor field effect transistor with Stone Wales defects

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Chanana, Anuja ^a   Sengupta, Amretashis ^a   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; BORON NITRIDE; DEFECTS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; GRAPHENE; GRAPHENE NANORIBBON; GRAPHENE TRANSISTORS; III-V SEMICONDUCTORS; METALS; MOS DEVICES; MOSFET DEVICES; NITRIDES; OXIDE SEMICONDUCTORS;

BALLISTIC TRANSPORTS; DEVICE CHARACTERISTICS; GEOMETRIC CONFIGURATIONS; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; PASSIVATED STRUCTURES; PERFORMANCE ANALYSIS; POISSON-SCHRODINGER SIMULATIONS; RANDOMLY DISTRIBUTED;

NANORIBBONS;

EID: 84893323754     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862311     Document Type: Article

References (46)

1. A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183-191 (2007). 10.1038/nmat1849
2. N. M. R. Peres, Rev. Mod. Phys. 82, 2673-2700 (2010). 10.1103/RevModPhys.82.2673
3. D. S. L. Abergela, V. Apalkovb, J. Berashevicha, K. Zieglerc, and T. Chakrabortya, Adv. Phys. 59, 261 (2010). 10.1080/00018732.2010.487978
4. A. H. C. Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys. 81, 109 (2009). 10.1103/RevModPhys.81.109
5. Y. Woo Son, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 97, 216803 (2006). 10.1103/PhysRevLett.97.216803
6. M. Y. Han, B. Özyilmaz, Y. Zhang, and P. Kim, Phys. Rev. Lett. 98, 206805 (2007). 10.1103/PhysRevLett.98.206805
7. B. Obradovic, R. Kotlyar, F. Heinz, P. Matagne, and T. Rakshit, Appl. Phys. Lett. 88, 142102 (2006). 10.1063/1.2191420
8. X. Li, X. Wang, Li Zhang, S. Lee, and H. Dai, Science 319, 1229 (2008). 10.1126/science.1150878
9. J. Cai, P. Ruffieux, R. Jaafar, M. Bieri, T. Braun, S. Blankenburg, M. Muoth, A. Seitsonen, M. Saleh, X. Feng, K. Müllen, and R. Fasel, Nature 466, 470 (2010). 10.1038/nature09211
10. D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii, J. R. Lomeda, A. Dimiev, B. Katherine Price, and J. M. Tour, Nature 458, 872 (2009). 10.1038/nature07872
11. L. Tapasztó, G. Dobrik, P. Lambin, and L. P. Biró, Nat. Nanotechnol. 3, 397-401 (2008). 10.1038/nnano.2008.149
12. B. Guo, L. Fang, B. Zhang, and J. Ru Gong, Insciences J. 1 (2), 80-89 (2011). 10.5640/insc.010280
13. H. Liu, Y. Liua, and D. Zhu, J. Mater. Chem. 21, 3253 (2011). 10.1039/c1jm90021h
14. P. P. Shinde and V. Kumar, Phys. Rev. B 84, 125401 (2011). 10.1103/PhysRevB.84.125401
15. T. B. Martins, R. H. Miwa, A. J. R. da Silva, and A. Fazzio, Phys. Rev. Lett. 98, 196803 (2007). 10.1103/PhysRevLett.98.196803
16. S. Yu, W. Zheng, C. Wang, and Q. Jiang, ACS Nano. 4, 7619-7629 (2010). 10.1021/nn102369r
17. N. Berseneva, A. V. Krasheninnikov, and R. M. Nieminen, Phys. Rev. Lett. 107, 035501 (2011). 10.1103/PhysRevLett.107.035501
18. S. Tang and Z. Cao, Phys. Chem. Chem. Phys. 12, 2313 (2010). 10.1039/b920754f
19. B. Xu, Y. H. Lu, Y. P. Feng, and J. Y. Lin, J. Appl. Phys. 108, 073711 (2010). 10.1063/1.3487959
20. Z. Zhang and W. Guo, Phys. Rev. B 77, 075403 (2008). 10.1103/PhysRevB.77. 075403
21. M. Topsakal, E. Aktürk, and S. Ciraci, Phys. Rev. B 79, 115442 (2009). 10.1103/PhysRevB.79.115442
22. S. Tang and Z. Cao, Chem. Phys. Lett. 488, 67-72 (2010). 10.1016/j.cplett.2010.01.073
23. M. Modarresi, M. R. Roknabadi, and N. Shahtahmasbi, Physica E 43, 1751-1754 (2011). 10.1016/j.physe.2011.06.006
24. E. Ahamed Basheer, P. Parida, and S. K. Pati, New J. Phys. 13, 053008 (2011). 10.1088/1367-2630/13/5/053008
25. A. L. Bezanilla, Phys. Rev. B 86, 165420 (2012). 10.1103/PhysRevB.86. 165420
26. G. Seol and J. Guo, Appl. Phys. Lett. 98, 143107 (2011). 10.1063/1.3571282
27. Y. Ding, Y. Wang, and J. Ni, Appl. Phys. Lett. 95, 123105 (2009). 10.1063/1.3234374
28. B. Huang, H. Lee, B. Lin Gu, F. Liu, and W. Duan, Nano Res. 5, 62 (2012). 10.1007/s12274-011-0185-y
29. X. Wei, M. S. Wang, Y. Bando, and D. Golberg, ACS Nano 5, 2916 (2011). 10.1021/nn103548r
30. L. Ci, L. Song, C. Jin, D. Jariwala, D. Wu, Y. Li, A. Srivastava, Z. F. Wang, K. Storr, L. Balicas, F. Liu, and P. M. Ajayan, Nature Mater. 9, 430 (2010). 10.1038/nmat2711
31. See http://www.itrs.net/Links/2012ITRS/Home2012.html for ITRS standards.
32. F. Banhart, J. Kotakoski, and A. V. Krasheninnikov, ACS Nano 5, 26 (2011). 10.1021/nn102598m
33. A. Zobelli, V. Ivanovskaya, P. Wagner, I. S. Martinez, A. Yaya, and C. P. Ewels, Phys. Status Solidi B 249, 276 (2012). 10.1002/pssb.201100630
34. P. T. Araujoa, M. Terronesb, and M. S. Dresselhaus, Mater. Today 15, 98 (2012). 10.1016/S1369-7021(12)70045-7
35. G. Wang, Phys. Chem. Chem. Phys. 13, 11939 (2011). 10.1039/c1cp20541b
36. H. Zeng, J. Zhao, J. W. Wei, and H. F. Hu, Eur. Phys. J. B 79, 335 (2011). 10.1140/epjb/e2010-10725-4
37. S. Bhowmick, Phys. Rev. B 81, 155416 (2010). 10.1103/PhysRevB.81.155416
38. See http://www.quantumwise.com/ for QuantumWise Atomistix ToolKit (ATK).
39. W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). 10.1103/PhysRev.140.A1133
40. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
41. A. Sengupta and S. Mahapatra, J. Appl. Phys. 113, 194502 (2013). 10.1063/1.4805059
42. A. Sengupta, R. K. Ghosh, and S. Mahapatra, IEEE Trans. Electron Devices 60, 2782 (2013). 10.1109/TED.2013.2273456
43. S. Datta, Superlattices Microstruct. 28, 253 (2000). 10.1006/spmi.2000. 0920
44. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram, Int. J. Multiscale Comp. Eng. 2, 257-276 (2004). 10.1615/IntJMultCompEng.v2.i2.60
45. Z. Ren, Ph.D. dissertation, Purdue University, 2001.
46. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, NY, 2005).