Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer

ACS Nano

Volumn 9, Issue 1, 2015, Pages 356-362

  Adinolfi, Valerio ^a   Kramer, Illan J ^a   Labelle, André J ^a   Sutherland, Brandon R ^a   Hoogland, S ^a   Sargent, Edward H ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

colloidal quantum dots; FET; JFET; photodetectors; phototransistors

Indexed keywords

DARK CURRENTS; ECONOMIC AND SOCIAL EFFECTS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOLYBDENUM OXIDE; NANOCRYSTALS; PHOTOCONDUCTING MATERIALS; PHOTODETECTORS; PHOTONS; PHOTOTRANSISTORS; SEMICONDUCTOR QUANTUM DOTS;

CHANNEL CHARACTERISTICS; COLLOIDAL QUANTUM DOTS; DARK CURRENT RATIO; FET; ORDERS OF MAGNITUDE; PHOTOSENSITIVE TRANSISTORS; RECTIFYING BEHAVIORS; TRANSPARENT CONDUCTIVE;

FIELD EFFECT TRANSISTORS;

EID: 84921730144     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5053537     Document Type: Article

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