Charge transfer effects in graphene-CdSe/ZnS quantum dots composites

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8462, Issue , 2012, Pages

  Klekachev, Alexander V ^a,b   Asselberghs, Inge ^a,b   Kuznetsov, Sergey N ^c   Cantoro, Mirco ^a,b   Mun, Jeong Hun ^d   Cho, Byung Jin ^d   Hotta, Jun Ichi ^b   Hofkens, Johan ^b   Van Der Veen, Marleen ^a   Stesmans, André L ^b   Heyns, Marc M ^a,b   De Gendt, Stefan ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PETROZAVODSK STATE UNIVERSITY   (Russian Federation)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Charge transfer; Colloidal semiconducting quantum dots; Graphene; Phototdetector; QD LED

Indexed keywords

COLLOIDAL SEMICONDUCTOR NANOCRYSTALS; ELECTRICAL MEASUREMENT; ELECTROLUMINESCENCE INTENSITY; ELECTRON TRANSFER; GRAPHENE SHEETS; HIGH TRANSPARENCY; HOLE INJECTION; II-VI QUANTUM DOTS; INDIUM TIN OXIDE; LOW RESISTIVITY; NANO-CRYSTALLINE STRUCTURES; OPTOELECTRONIC APPLICATIONS; PHOTOLUMINESCENCE IMAGING; PHOTOTDETECTOR; QD-LED; QUANTUM-DOT LIGHT EMITTING DIODES; SEMICONDUCTING QUANTUM DOTS; SINGLE LAYER; SPECIFIC ENERGY; STRONG FIELD; VISIBLE LIGHT; ZERO-DIMENSIONAL;

CARBON NANOTUBES; CHARGE TRANSFER; ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOEXCITATION; SEMICONDUCTOR QUANTUM DOTS; TIN;

GRAPHENE;

EID: 84872121906     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.930082     Document Type: Conference Paper

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