High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

Applied Physics Letters

Volumn 105, Issue 3, 2014, Pages

  Mu, Haichuan ^a   Zhang, Zhiqiang ^a   Zhao, Xiaojing ^b   Liu, Feng ^b   Wang, Keke ^a   Xie, Haifen ^a  

^a EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b SHANGHAI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; DEPOSITION; FORMALDEHYDE; GRAPHENE; METALLIC FILMS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

DETECTION LIMITS; GRAPHENE FILMS; HIGH SENSITIVITY; PARTS PER BILLION; PARTS PER MILLIONS; RESISTANCE CHANGE; ROOM TEMPERATURE; ZINC OXIDE (ZNO);

OXIDE FILMS;

EID: 84921532961     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4890583     Document Type: Article

References (34)

1. K. C. Gupta, A. G. Ulsamer, and P. W. Preuss, Environ. Int. 8, 349 (1982). 10.1016/0160-4120(82)90049-6
2. X. F. Wang, B. Ding, M. Sun, J. Y. Yu, and G. Sun, Sens. Actuators, B 144, 11 (2010). 10.1016/j.snb.2009.08.023
3. Y. Herschkovitz, I. Eshkenazi, C. E. Campbell, and J. Rishpon, J. Electroanal. Chem. 491, 182 (2000). 10.1016/S0022-0728(00)00170-4
4. K. W. Zhou, X. L. Ji, N. Zhang, and X. R. Zhang, Sens. Actuators, B 119, 392 (2006). 10.1016/j.snb.2005.12.038
5. A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007). 10.1038/nmat1849
6. A. K. Geim, Science 324 (19), 1530 (2009). 10.1126/science.1158877
7. S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, and A. K. Geim, Phys. Rev. Lett. 100, 016602 (2008). 10.1103/PhysRevLett.100.016602
8. J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. 3, 206 (2008). 10.1038/nnano.2008.58
9. D. B. Farmer, H.-Y. Chiu, Y.-M. Lin, K. A. Jenkins, F. Xia, and P. Avouris, Nano Lett. 9 (12), 4474 (2009). 10.1021/nl902788u
10. Y. Y. Hui, G. Tai, Z. Sun, Z. Xu, N. Wang, F. Yan, and S. P. Lau, Nanoscale 4, 3118 (2012). 10.1039/c2nr30249g
11. T.-H. Han, Y. Lee, M. R. Choi, S.-H. Woo, S.-H. Bae, B. H. Hong, J.-H. Ahn, and T.-W. Lee, Nat. Photonics 6, 105 (2012). 10.1038/nphoton.2011.318
12. Y. Dan, Y. Lu, N. J. Kybert, Z. Luo, and A. T. Charlie Johnson, Nano Lett. 9 (4), 1472 (2009). 10.1021/nl8033637
13. F. Yavari, E. Castillo, H. Gullapalli, P. M. Ajayan, and N. Koratkar, Appl. Phys. Lett. 100, 203120 (2012). 10.1063/1.4720074
14. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nat. Mater. 6, 652 (2007). 10.1038/nmat1967
15. G. Lu, L. E. Ocola, and J. Chen, Appl. Phys. Lett. 94, 083111 (2009). 10.1063/1.3086896
16. M. G. Chung, D. H. Kim, H. M. Lee, T. Kim, J. H. Choi, D. K. Seo, J.-B. Yoo, S.-H. Hong, T. J. Kang, and Y. H. Kim, Sens. Actuators, B 166-167, 172 (2012). 10.1016/j.snb.2012.02.036
17. J. D. Fowler, M. J. Allen, V. C. Tung, Y. Yang, R. B. Kaner, and B. H. Weiler, ACS Nano 3, 301 (2009). 10.1021/nn800593m
18. R. Pearce, T. Lakimov, M. Andersson, L. Hultman, A. L. Spetz, and R. Yakimova, Sens. Actuators, B 155, 451 (2011). 10.1016/j.snb.2010.12.046
19. R. Majidi and A. R. Karami, Physica E 59, 169 (2014). 10.1016/j.physe.2014.01.019
20. L. Peng, Q. Zhao, D. Wang, J. Zhai, P. Wang, S. Pang, and T. Xie, Sens. Actuators, B 136, 80 (2009). 10.1016/j.snb.2008.10.057
21. Z. Bai, C. Xie, M. Hu, and S. Zhang, Physica E 41, 235 (2008). 10.1016/j.physe.2008.07.019
22. N. Han, X. Wu, D. Zhang, G. Shen, H. Liu, and Y. Chen, Sens. Actuators, B 152, 324 (2011). 10.1016/j.snb.2010.12.029
23. C. Xie, L. Xiao, M. Hu, Z. Bai, X. Xia, and D. Zeng, Sens. Actuators, B 145, 457 (2010). 10.1016/j.snb.2009.12.052
24. B. Lee, S. Y. Park, H.-C. Kim, K. Chio, E. M. Vogel, M. J. Kim, R. M. Wallace, and J. Kim, Appl. Phys. Lett. 92, 203102 (2008). 10.1063/1.2928228
25. Y. Xuan, Y. Q. Wu, T. Shen, M. Qi, M. A. Capano, J. A. Cooper, and P. D. Ye, Appl. Phys. Lett. 92, 013101 (2008). 10.1063/1.2828338
26. B. Fallahazad, K. Lee, G. Lian, S. Kim, C. M. Corbet, D. A. Ferrer, L. Colombo, and E. Tutuc, Appl. Phys. Lett. 100, 093112 (2012). 10.1063/1.3689785
27. U. Zielke, K. J. Hutimger, and W. P. Hoffman, Carbon 34, 983 (1996). 10.1016/0008-6223(96)00032-2
28. J. M. Simmons, B. M. Nichols, S. E. Baker, M. S. Marcus, O. M. Castellini, C.-S. Lee, R. J. Hamers, and M. A. Eriksson, J. Phys. Chem. B 110, 7113 (2006). 10.1021/jp0548422
29. M.-L. Sham and J.-K. Kim, Carbon 44, 768 (2006). 10.1016/j.carbon.2005.09.013
30. N. Yamazoe, G. Sakai, and K. Shimanoe, Catal. Surv. Asia 7, 63 (2003). 10.1023/A:1023436725457
31. A. Forleo, L. Francioso, S. Capone, P. Siciliano, P. Lommens, and Z. Hens, Sens. Actuators, B 146, 111 (2010). 10.1016/j.snb.2010.02.059
32. Q. H. Li, Y. X. Liang, Q. Wan, and T. H. Wang, Appl. Phys. Lett. 85, 6389 (2004). 10.1063/1.1840116
33. J. Xu, Q. Pan, Y. Shun, and Z. Tian, Sens. Actuators, B 66, 277 (2000). 10.1016/S0925-4005(00)00381-6
34. See supplemental material at http://dx.doi.org/10.1063/1.4890583 E-APPLAB-105-055429 for XPS and Raman spectra of as-grown and ZnO modified graphene as well as detailed explanation.