Scalable tight-binding model for graphene

Physical Review Letters

Volumn 114, Issue 3, 2015, Pages

  Liu, Ming Hao ^a   Rickhaus, Peter ^b   Makk, Péter ^b   Tóvári, Endre ^c   Maurand, Romain ^d   Tkatschenko, Fedor ^a   Weiss, Markus ^b   Schönenberger, Christian ^b   Richter, Klaus ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b UNIVERSITY OF BASEL   (Switzerland)

^c BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^d UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; ELECTRONIC PROPERTIES; HONEYCOMB STRUCTURES; QUANTUM CHEMISTRY; QUANTUM HALL EFFECT; TRANSPORT PROPERTIES;

BALLISTIC TRANSPORTS; CONDUCTANCE QUANTIZATION; GRAPHENE P-N JUNCTIONS; HONEYCOMB LATTICES; TIGHT BINDING MODEL; TRANSPORT MEASUREMENTS; TRANSPORT SIMULATION; ZERO MAGNETIC FIELDS;

GRAPHENE;

EID: 84921514669     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.114.036601     Document Type: Article

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