A ballistic pn junction in suspended graphene with split bottom gates

Applied Physics Letters

Volumn 102, Issue 22, 2013, Pages

  Grushina, Anya L ^a   Ki, Dong Keun ^a   Morpurgo, Alberto F ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC REGIME; BOTTOM GATE; DEGREE OF CONTROL; FABRY-PEROT OSCILLATIONS; GATE VOLTAGES; HIGH QUALITY; P-N JUNCTION; SUSPENDED GRAPHENE;

BALLISTICS; ELECTRONIC PROPERTIES; QUALITY CONTROL;

GRAPHENE;

EID: 84879081777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807888     Document Type: Article

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