Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

Semiconductor Science and Technology

Volumn 30, Issue 2, 2015, Pages

  Korhonen, E ^a   Prozheeva, V ^a   Tuomisto, F ^a   Bierwagen, O ^b,e   Speck, J S ^b   White, M E ^b   Galazka, Z ^c   Liu, H ^d   Izyumskaya, N ^d   Avrutin, V ^d   Ozgur U ^d   Morkoc H ^d  

^a AALTO UNIVERSITY   (Finland)

^b University of California   (United States)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d Virginia Commonwealth University   (United States)

^e PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

oxides; positron annihilation; vacancies

Indexed keywords

DEFECTS; ELECTRONS; II-VI SEMICONDUCTORS; OXIDES; POSITIVE IONS; POSITRON ANNIHILATION; POSITRONS; SEMICONDUCTOR DOPING; THIN FILMS; VACANCIES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CATION VACANCIES; ELECTRICAL COMPENSATION; HIGH DOPING LEVEL; SB-DOPED SNO2; TRANSPARENT SEMICONDUCTING OXIDE; VACANCY CLUSTER; VARIABLE SIZES; ZNO THIN FILM;

ANTIMONY COMPOUNDS;

EID: 84921487179     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/2/024011     Document Type: Article

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