Organic nonvolatile resistive switching memory based on molecularly entrapped fullerene derivative within a diblock copolymer nanostructure

Macromolecular Rapid Communications

Volumn 34, Issue 4, 2013, Pages 355-361

  Jo, Hanju ^a   Ko, Jieun ^a   Lim, Jung Ah ^b   Chang, Hye Jung ^b   Kim, Youn Sang ^a  

^a Seoul National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

block copolymer; flexible memory; fullerene derivative; information storage material; resistive switching memory

Indexed keywords

AMBIENT CONDITIONS; BIPOLAR CHARACTERISTICS; BLEND SOLUTION; FLEXIBLE MEMORIES; FULLERENE DERIVATIVE; LOW OPERATING VOLTAGE; METHYL ESTERS; NANO TEMPLATES; NANO-STRUCTURED; NON-VOLATILE; PMMA MATRICES; PS NANO SPHERES; RESISTIVE MEMORIES; RESISTIVE RANDOM ACCESS MEMORY (RERAM); RESISTIVE SWITCHING MEMORIES; SELECTIVE INCORPORATIONS; SELF-ASSEMBLED; SPIN CASTING;

BLOCK COPOLYMERS; ELECTRIC PROPERTIES; ESTERS; FULLERENES; NANOSPHERES; STYRENE;

NONVOLATILE STORAGE;

(6,6) PHENYL C61 BUTYRIC ACID METHYL ESTER; (6,6)-PHENYL C61-BUTYRIC ACID METHYL ESTER; FULLERENE DERIVATIVE; NANOMATERIAL; POLY(METHYL METHACRYLATE); POLY(STYRENE BLOCK METHYL METHACRYLATE); POLY(STYRENE-BLOCK-METHYL METHACRYLATE); POLYSTYRENE DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRICITY; SEMICONDUCTOR;

ELECTRICITY; FULLERENES; NANOSTRUCTURES; POLYMETHYL METHACRYLATE; POLYSTYRENES; SEMICONDUCTORS;

EID: 84873891844     PISSN: 10221336     EISSN: 15213927     Source Type: Journal    
DOI: 10.1002/marc.201200614     Document Type: Article

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