Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages

  Hussain, Sajjad ^a   Iqbal, Muhmmad Waqas ^a   Park, Jaehyun ^a   Ahmad, Muneer ^a   Singh, Jai ^a   Eom, Jonghwa ^a   Jung, Jongwan ^a  

^a Sejong University   (South Korea)

Author keywords

CVD; Graphene synthesis; H2 flow; Mobility; Raman

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; GRAIN GROWTH; HYDROGEN; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; OXYGEN;

FLOW CONDITION; GRAPHENE FILMS; H2 FLOW; HYDROGEN FLOW; OXIDIZED CARBONS; RAMAN;

GRAPHENE;

EID: 84919903615     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-546     Document Type: Article

References (37)

1. Orlita M, Faugeras C, Plochocka P, Neugebauer P, Martinez G, Maude DK, Barra A-L, Sprinkle M, Berger C, de Heer WA: Approaching the Dirac point in high-mobility multilayer epitaxial graphene.Phys Rev Lett 2008, 101:267601.
2. Tombros N, Jozsa C, Popinciuc M, Jonkman HT, Van Wees BJ: Electronic spin transport and spin precession in single graphene layers at room temperature.Nature 2007, 448:571–574. 10.1038/nature06037
3. Blake P, Brimicombe PD, Nair RR, Booth TJ, Jiang D, Schedin F, Ponomarenko LA, Morozov SV, Gleeson HF, Hill EW: Graphene-based liquid crystal device.Nano Lett 2008, 8:1704–1708. 10.1021/nl080649i
4. Wang X, Zhi L, Müllen K: Transparent, conductive graphene electrodes for dye-sensitized solar cells.Nano Lett 2008, 8:323–327. 10.1021/nl072838r
5. Freitag M: Graphene: nanoelectronics goes flat out.Nat Nanotechnol 2008, 3:455–457. 10.1038/nnano.2008.219
6. Lin Y-M, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P: Operation of graphene transistors at gigahertz frequencies.Nano Lett 2008, 9:422–426.
7. Lin Y-M, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu H-Y, Grill A, Avouris P: 100-GHz transistors from wafer-scale epitaxial graphene.Science 2010, 327:662–662. 10.1126/science.1184289
8. Lee H-J, Kim E, Yook J-G, Jung J: Intrinsic characteristics of transmission line of graphenes at microwave frequencies.Applied Physics Letters 2012., 100: 223102–223102–223103
9. Shin H-J, Choi WM, Choi D, Han GH, Yoon S-M, Park H-K, Kim S-W, Jin YW, Lee SY, Kim JM: Control of electronic structure of graphene by various dopants and their effects on a nanogenerator.J Am Chem Soc 2010, 132:15603–15609. 10.1021/ja105140e
10. Novoselov K, Geim AK, Morozov S, Jiang D, Grigorieva MKI, Dubonos S, Firsov A: Two-dimensional gas of massless Dirac fermions in graphene.Nature 2005, 438:197–200. 10.1038/nature04233
11. Novoselov K, Jiang D, Schedin F, Booth T, Khotkevich V, Morozov S, Geim A: Two-dimensional atomic crystals.Proc Natl Acad Sci U S A 2005, 102:10451–10453. 10.1073/pnas.0502848102
12. Yazyev OV, Louie SG: Electronic transport in polycrystalline graphene.Nat Mater 2010, 9:806–809. 10.1038/nmat2830
13. Grantab R, Shenoy VB, Ruoff RS: Anomalous strength characteristics of tilt grain boundaries in graphene.Science 2010, 330:946–948. 10.1126/science.1196893
14. Yu Q, Jauregui LA, Wu W, Colby R, Tian J, Su Z, Cao H, Liu Z, Pandey D, Wei D: Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition.Nat Mater 2011, 10:443–449. 10.1038/nmat3010
15. Li S, Cai W, An JH, Kim S, Nah J, Yang X, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS: Large-area synthesis of high-quality and uniform graphene films on copper foils.Science 2009, 324:1312–1314. 10.1126/science.1171245
16. Reina A, Jia T, Ho J, Nezich D, Son HB, Bulovic V, Dresselhaus MS, Kong J: Layer area, few-layer graphene films on arbitrary substrates by chemical vapor deposition.Nano Lett 2009, 9:3087–3087.
17. Kim E, An H, Jang H, Cho W-J, Lee N, Lee W-G, Jung J: Growth of few-layer graphene on a thin cobalt film on a Si/SiO2 substrate.Chem Vapor Depos 2011, 17:9–14. 10.1002/cvde.201004296
18. An H, Lee W-J, Jung J: Graphene synthesis on Fe foil using thermal CVD.Current Applied Physics 2011, 11:S81-S85.
19. Losurdo M, Giangregorio MM, Capezzuto P, Bruno G: Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure.Phys Chem Chem Phys 2011, 13:20836–20843. 10.1039/c1cp22347j
20. Galea NM, Knapp D, Ziegler T: Density functional theory studies of methane dissociation on anode catalysts in solid-oxide fuel cells: suggestions for coke reduction.J Catal 2007, 247:20–33. 10.1016/j.jcat.2006.12.021
21. Gelb A, Cardillo M: Classical trajectory studies of hydrogen dissociation on a Cu(100) surface.Surf Sci 1976, 59:128–140. 10.1016/0039-6028(76)90296-X
22. Singh AK, Iqbal MW, Singh VK, Iqbal MZ, Lee JH, Chun SH, Shin K, Eom J: Molecular n-doping of chemical vapor deposition grown graphene.J Mater Chem 2012, 22:15168–15174. 10.1039/c2jm32716c
23. Ferrari A, Meyer J, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov K, Roth S: Raman spectrum of graphene and graphene layers.Phys Rev Lett 2006, 97:187401.
24. Tongay S, Berke K, Lemaitre M, Nasrollahi Z, Tanner D, Hebard A, Appleton B: Stable hole doping of graphene for low electrical resistance and high optical transparency.Nanotechnology 2011, 22:425701. 10.1088/0957-4484/22/42/425701
25. Late DJ, Maitra U, Panchakarla L, Waghmare UV, Rao C: Temperature effects on the Raman spectra of graphenes: dependence on the number of layers and doping.J Phys Condens Matter 2011, 23:055303. 10.1088/0953-8984/23/5/055303
26. Late DJ, Ghosh A, Chakraborty B, Sood A, Waghmare UV, Rao C: Molecular charge-transfer interaction with single-layer graphene.J Exp Nanos 2011, 6:641–651. 10.1080/17458080.2010.529174
27. 2and humidity sensing characteristics of few-layer graphenes.J Exp Nanos 2009, 4:313–322. 10.1080/17458080903115379
28. Rao CNR, Subrahmanyam KS, Matte HSSR, Abdulhakeem B, Govindaraj A, Das B, Kumar P, Ghosh A, Late DJ: A study of the synthetic methods and properties of graphenes.Sci Technol Adv Mat 2010, 11:054502. 10.1088/1468-6996/11/5/054502
29. Campos-Delgado J, Romo-Herrera JM, Jia X, Cullen DA, Muramatsu H, Kim YA, Hayashi T, Ren Z, Smith DJ, Okuno Y: Bulk production of a new form of sp2 carbon: Crystalline graphene nanoribbons.Nano Lett 2008, 8:2773–2778. 10.1021/nl801316d
30. Bae S, Kim H, Lee Y, Xu X, Park J-S, Zheng Y, Balakrishnan J, Lei T, Kim HR, Song YI: Roll-to-roll production of 30-inch graphene films for transparent electrodes.Nat Nanotechnol 2010, 5:574–578. 10.1038/nnano.2010.132
31. Chen S, Brown L, Levendorf M, Cai W, Ju S-Y, Edgeworth J, Li X, Magnuson CW, Velamakanni A, Piner RD: Oxidation resistance of graphene-coated Cu and Cu/Ni alloy.ACS Nano 2011, 5:1321–1327. 10.1021/nn103028d
32. Reckinger N, Felten A, Santos CN, Hackens B, Colomer J-F: The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition.Carbon 2013, 63:84–91.
33. Hwang E, Adam S, Sarma SD: Carrier transport in two-dimensional graphene layers.Phys Rev Lett 2007, 98:186806.
34. Tan Y-W, Zhang Y, Bolotin K, Zhao Y, Adam S, Hwang E, Sarma SD, Stormer H, Kim P: Measurement of scattering rate and minimum conductivity in graphene.Phys Rev Lett 2007, 99:246803.
35. Oh Y, Eom J, Koo HC, Han SH: Electronic phase coherence and relaxation in graphene field effect transistor.Solid State Communications 2010, 150:1987–1990. 10.1016/j.ssc.2010.08.020
36. Late DJ, Ghosh A, Subrahmanyam K, Panchakarla L, Krupanidhi S, Rao C: Characteristics of field-effect transistors based on undoped and B-and N-doped few-layer graphenes.Solid State Communications 2010, 150:734–738. 10.1016/j.ssc.2010.01.030
37. Sun Z, Yan Z, Yao J, Beitler E, Zhu Y, Tour JM: Growth of graphene from solid carbon sources.Nature 2011, 471:124–124.