Electronic phase coherence and relaxation in graphene field effect transistor

Solid State Communications

Volumn 150, Issue 41-42, 2010, Pages 1987-1990

  Oh, Youngman ^a   Eom, Jonghwa ^a   Koo, Hyun Cheol ^b   Han, Suk Hee ^b  

^a Sejong University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

A. Graphene; D. Phase coherence; D. Weak localization; E. Magnetoresistance

Indexed keywords

A. GRAPHENE; CHARACTERISTIC TIME; DIRAC POINT; E. MAGNETORESISTANCE; INTERVALLEY SCATTERING; LOW-FIELD MAGNETORESISTANCE; LOWER DENSITY; MOMENTUM RELAXATION; PHASE COHERENCE; TEMPERATURE DEPENDENCE; WEAK LOCALIZATION;

ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; GRAPHENE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; RELAXATION PROCESSES;

COHERENT SCATTERING;

EID: 77957265707     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.08.020     Document Type: Article

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