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Volumn 105, Issue 3, 2014, Pages

Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi

(8) Zhang, Yi a,b Liu, Zhongkai b,c Zhou, Bo a,c,d Kim, Yeongkwan a Hussain, Zahid a Shen, Zhi Xun b,c Chen, Yulin d Mo, Sung Kwan a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b SLAC NATIONAL ACCELERATOR LABORATORY (United States)

c STANFORD UNIVERSITY (United States)

d UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SODIUM; THIN FILMS;

3-DIMENSIONAL; ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; DIFFERENT SUBSTRATES; EPITAXIAL BILAYERS; LATTICE ORIENTATIONS; MOLECULAR BEAM EPITAXIAL GROWTH; SINGLE CRYSTAL THIN FILMS; SURFACE LATTICE;

EPITAXIAL GROWTH;

EID: 84919729379 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4890940 Document Type: Article

Times cited : (43)

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