Radiative and interfacial recombination in CdTe heterostructures

Applied Physics Letters

Volumn 105, Issue 22, 2014, Pages

  Swartz, C H ^a   Edirisooriya, M ^a   Leblanc, E G ^a   Noriega, O C ^a   Jayathilaka, P A R D ^a   Ogedengbe, O S ^a   Hancock, B L ^a   Holtz, M ^a   Myers, T H ^a   Zaunbrecher, K N ^b  

^a TEXAS STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; CADMIUM TELLURIDE; ENERGY GAP; FILM GROWTH; INTERFACES (MATERIALS);

COMBINED METHOD; DOUBLE HETEROSTRUCTURES; EXCITATION INTENSITY; INTERFACE LAYER; INTERFACE STATE DENSITY; NON-RADIATIVE RECOMBINATIONS; RADIATIVE EFFICIENCY; RADIATIVE RECOMBINATION;

INTERFACE STATES;

EID: 84915746579     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4902926     Document Type: Article

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