Evaluation of the concentration of deep levels in semi-insulating CdTe by photoconductivity and TEES

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 1706-1711

  Kubat, Jan ^a   Elhadidy, Hassan ^a   Franc, Jan ^a   Grill, Roman ^a   Belas, Eduard ^a   Hoschl, Pavel ^a   Praus, Petr ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Deep levels; High resistivity; Photoelectric measurements

Indexed keywords

CDTE; CONCENTRATION OF; DEEP DOPANT; DEEP LEVEL; DEEP LEVELS; DRIFT DIFFUSION; EXPERIMENTAL DATA; HIGH-RESISTIVITY; NUMERICAL SOLUTION; PHOTOELECTRIC MEASUREMENTS; ROOM TEMPERATURE; SEMI-INSULATING; THERMOELECTRIC EFFECT SPECTROSCOPY;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DOPING (ADDITIVES); POISSON EQUATION;

PHOTOELECTRICITY;

EID: 69649097238     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2022162     Document Type: Conference Paper

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