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Volumn , Issue , 2014, Pages 2419-2424

Study of defects in CdTe heterostructures using imaging confocal photoluminescence and photoluminescence intensity measurements

Author keywords

CdTe; molecular beam epitaxy; photoluminescence; Surface passivation

Indexed keywords

CADMIUM TELLURIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE;

EID: 84912101564     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6925416     Document Type: Conference Paper
Times cited : (3)

References (35)
  • 1
    • 1342334375 scopus 로고    scopus 로고
    • Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells
    • C. J. Bridge, P. Dawson, P. D. Buckle, and M. E. Ozsan, "Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells", Journal of Applied Physics, Vol. 88, pp. 6451-6456, 2000.
    • (2000) Journal of Applied Physics , vol.88 , pp. 6451-6456
    • Bridge, C.J.1    Dawson, P.2    Buckle, P.D.3    Ozsan, M.E.4
  • 2
    • 18444391818 scopus 로고    scopus 로고
    • Efficiency limitations for wideband-gap chalcopyrite solar cells
    • M. Gloeckler and J. R. Sites, "Efficiency limitations for wideband-gap chalcopyrite solar cells", Thin Solid Films, Vol. 480 pp. 241-245, 2005.
    • (2005) Thin Solid Films , vol.480 , pp. 241-245
    • Gloeckler, M.1    Sites, J.R.2
  • 4
    • 84889852715 scopus 로고    scopus 로고
    • Grow1h, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy
    • M. J. DiNezza, X.-H. Zhao, S. Liu, A. P. Kirk, and Y.-H. Zhang, "Grow1h, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy", Applied Physics Letters, Vol. 103, p. 193901, 2013
    • (2013) Applied Physics Letters , vol.103
    • DiNezza, M.J.1    Zhao, X.-H.2    Liu, S.3    Kirk, A.P.4    Zhang, Y.-H.5
  • 9
    • 0003012243 scopus 로고    scopus 로고
    • Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers
    • B. Adamowicz, H. Hasegawa, "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers", Thin Solid Films, Vol. 367, pp. 180-183, 2000.
    • (2000) Thin Solid Films , vol.367 , pp. 180-183
    • Adamowicz, B.1    Hasegawa, H.2
  • 10
    • 0032180717 scopus 로고    scopus 로고
    • Optical measurement system for characterizing compound semiconductor interface and surface states
    • M. Passlack and Z. Yu, "Optical Measurement System for Characterizing Compound Semiconductor Interface and Surface States", IEEE Transactions on Instrumentation and Measurement, Vol. 47, pp. 1362-1366, 1998.
    • (1998) IEEE Transactions on Instrumentation and Measurement , vol.47 , pp. 1362-1366
    • Passlack, M.1    Yu, Z.2
  • 12
    • 84884595709 scopus 로고    scopus 로고
    • Determination of bulk lifetime and surface recombination velocity of silicon ingots from dynamic photoluminescence
    • J. A. Giesecke, R. A. Sinton, M. C. Schubert, S. Riepe, and W. Warta, "Determination of bulk lifetime and surface recombination velocity of silicon ingots from dynamic photoluminescence", IEEE Journal of Photovoltaics, Vol. 3, pp. 1311-1318, 2013.
    • (2013) IEEE Journal of Photovoltaics , vol.3 , pp. 1311-1318
    • Giesecke, J.A.1    Sinton, R.A.2    Schubert, M.C.3    Riepe, S.4    Warta, W.5
  • 13
    • 0022806920 scopus 로고
    • Comment on G J. Rees 'Surface recombination velocity - A useful concept?'
    • P. De Visschere, "Comment on G J. Rees 'Surface recombination velocity - a useful concept?'", Solid-State Electronics, Vol. 29, pp. 1161-1165, 1986.
    • (1986) Solid-State Electronics , vol.29 , pp. 1161-1165
    • De Visschere, P.1
  • 14
    • 0001581449 scopus 로고    scopus 로고
    • Computer analysis of surface recombination process at Si and compound semiconductor surfaces and behavior of surface recombination velocity
    • B. Adamowicz and H. Hasegawa, "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity", Japanese Journal of Applied Physics, Vol. 37, pp. 1631-1637, 1998.
    • (1998) Japanese Journal of Applied Physics , vol.37 , pp. 1631-1637
    • Adamowicz, B.1    Hasegawa, H.2
  • 16
    • 21844447280 scopus 로고
    • On the convergence of gummel's numerical algorithm
    • M. S. Mock, "On the convergence of Gummel's numerical algorithm", Solid-State Electronics, Vol. 15, pp. 1-4. 1972.
    • (1972) Solid-State Electronics , vol.15 , pp. 1-4
    • Mock, M.S.1
  • 17
    • 0022024879 scopus 로고
    • A new treatment of the recombination term in the current continuity equations of semi-conductor device models
    • J. H. Miller, "A new treatment of the recombination term in the current continuity equations of semi-conductor device models", Engineering Computation, Vol. 2, pp. 71-73, 1985.
    • (1985) Engineering Computation , vol.2 , pp. 71-73
    • Miller, J.H.1
  • 18
    • 0015431763 scopus 로고
    • Iterative scheme for computer simulation of semiconductor devices
    • T. I. Seidman and S. C. Choo, "Iterative scheme for computer simulation of semiconductor devices", Solid-State Electronics, Vol. 15, pp. 1229-1235, 1972.
    • (1972) Solid-State Electronics , vol.15 , pp. 1229-1235
    • Seidman, T.I.1    Choo, S.C.2
  • 21
    • 36149046194 scopus 로고
    • Auger recombination in direct-gap semiconductors: Band-structure effects
    • A. Haug, "Auger recombination in direct-gap semiconductors: band-structure effects", Journal of Physics C: Solid State Physics, Vol. 16, pp. 4159-4172, 1983.
    • (1983) Journal of Physics C: Solid State Physics , vol.16 , pp. 4159-4172
    • Haug, A.1
  • 23
    • 33947278312 scopus 로고    scopus 로고
    • Some comments on the determination and interpretation of barrier heights of metal-semiconductor contacts
    • W. Monch, "Some comments on the determination and interpretation of barrier heights of metal-semiconductor contacts", Applied Physics A, Vol. 87, pp. 359-366, 2007.
    • (2007) Applied Physics A , vol.87 , pp. 359-366
    • Monch, W.1
  • 25
    • 0000842349 scopus 로고    scopus 로고
    • Electrodeposited CdTe-optical properties
    • A. E. Rakhashani, "Electrodeposited CdTe-optical properties", Journal of Applied physics, Vol. 81, pp. 7988-7993, 1997.
    • (1997) Journal of Applied Physics , vol.81 , pp. 7988-7993
    • Rakhashani, A.E.1
  • 29
    • 0020752151 scopus 로고
    • On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
    • H. Hasegawa and T. Sawada, "On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states", Thin Solid Films, Vol. 103, pp. 119-140, 1983.
    • (1983) Thin Solid Films , vol.103 , pp. 119-140
    • Hasegawa, H.1    Sawada, T.2
  • 30
    • 52949091542 scopus 로고    scopus 로고
    • Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics
    • H. Hasegawa and M. Akazawa, "Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics", Applied Surface Science, Vol. 254, pp. 8005-8015, 2008.
    • (2008) Applied Surface Science , vol.254 , pp. 8005-8015
    • Hasegawa, H.1    Akazawa, M.2
  • 31
    • 84912143435 scopus 로고    scopus 로고
    • Ref. 19, p. 119ff
    • Ref. 19, p. 119ff.
  • 32
    • 84908208610 scopus 로고    scopus 로고
    • The role of drift, diffusion, and recombination in time-resolved photoluminescence of CdTe solar cells determined through numerical simulation
    • A. Kanevce, D. H. Levi and D. Kuciauskas, "The role of drift, diffusion, and recombination in time-resolved photoluminescence of CdTe solar cells determined through numerical simulation", Prowess in Photovoltaics Research: Applied, doi:10.1002/pip.2369, 2013.
    • (2013) Prowess in Photovoltaics Research: Applied
    • Kanevce, A.1    Levi, D.H.2    Kuciauskas, D.3
  • 33
    • 35148886794 scopus 로고
    • Photon-radiative recombination of electrons and holes in germanium
    • W. van Roosbroeck and W. Shockley, "Photon-Radiative Recombination of Electrons and Holes in Germanium", Physical Review, Vol. 94, pp. 1558-1560, 1954.
    • (1954) Physical Review , vol.94 , pp. 1558-1560
    • Van Roosbroeck, W.1    Shockley, W.2
  • 34
    • 0013154039 scopus 로고
    • Spatial uniformity of minority-carrier lifetime in polycrystalline CdTe solar cells
    • R. K. Ahrenkiel, B. M. Keyes, D. L. Levi, K. Emery, T. L. Chu, S. S. Chu, "Spatial uniformity of minority-carrier lifetime in polycrystalline CdTe solar cells", Applied physics Letters, Vol. 64, pp. 2879-2881, 1994.
    • (1994) Applied Physics Letters , vol.64 , pp. 2879-2881
    • Ahrenkiel, R.K.1    Keyes, B.M.2    Levi, D.L.3    Emery, K.4    Chu, T.L.5    Chu, S.S.6
  • 35
    • 0242671180 scopus 로고    scopus 로고
    • Unusually low surface recombination and long bulk lifetime in n-cdte single crystals
    • R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, "Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals", Applied physics Letters, Vol. 73, pp. 1400-1402, 1998.
    • (1998) Applied Physics Letters , vol.73 , pp. 1400-1402
    • Cohen, R.1    Lyahovitskaya, V.2    Poles, E.3    Liu, A.4    Rosenwaks, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.