MBE-grown InGaP/GaAs/InGaAsP triple junction solar cells fabricated by advanced bonding technique

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Volumn , Issue , 2014, Pages 542-545

  Sugaya, Takeyoshi ^a   Makita, Kikuo ^a   Mizuno, Hidenori ^a   Takeda, Akihiro ^b   Mochizuki, Toru ^b   Oshima, Ryuji ^a   Matsubara, Koji ^a   Okano, Yoshinobu ^b   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

advanced bonding technique; InGaAsP; InGaP; molecular beam epitaxy; triple junction solar cells

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING INDIUM PHOSPHIDE;

BONDING TECHNIQUES; HIGH QUALITY; HIGH-EFFICIENCY; INGAASP; INGAP; PD NANO PARTICLE; SOLID-SOURCE MOLECULAR BEAM EPITAXY; TRIPLE JUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 84912122921     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6924978     Document Type: Conference Paper

References (11)

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