Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells flown onboard Equator-S satellite

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 573-578

  Haapamaa, J ^a   Pessa, M ^a   La Roche, G ^b  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON IRRADIATION; MOLECULAR BEAM EPITAXY; SATELLITES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SHORT CIRCUIT CURRENTS;

CASCADE SOLAR CELLS; RADIATION RESISTANCE;

SOLAR CELLS;

EID: 0035254713     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00241-5     Document Type: Article

References (6)

1. T. Takamoto, M. Yamaguchi, S.J. Taylor, E. Ikeda, T. Agui, H. Kurita, High-efficiency radiation-resistant InGaP/GaAs tandem solar cells, Conference Record of 26th IEEE PVSC, 1997, pp. 887-890.
2. R.J. Walters, M.A. Xapsos, G.P. Summers, H.L. Cotal, S.R. Messenger, Radiation response of single and dual junction p+n InGaP/GaAs space solar cells, Conference Record of 26th IEEE PVSC, 1997, pp. 843-846.
3. J. Lammasniemi, A.B. Kazantsev, R. Jaakkola, M. Toivonen, M. Jalonen, R. Aho, M. Pessa, GaInP/GaAs cascade solar cells grown by molecular beam epitaxy, Conference Record of 26th IEEE PVSC, 1997, pp. 823-826.
4. Service provided by European Space Agency. See http://www.spenvis.oma.be/spenvis/.
5. S.R. Kurtz, K.A. Bertness, D.J. Friedman, A.E. Kibbler, C. Kramer, J.M. Olson, 19.6% electron-irradiated GaInP/GaAs cells, Proceedings of the 1994 IEEE First World Conference on PV Energy Conversion, pp. 2108-2111.
6. M. Yamaguchi, C. Vargas-Arbuto, S.J. Taylor, M.Yang, T. Takamoto, E. Ikeda, H. Kurita, M. Ohmori, R.M. Uribe, D. Brinker, D.A. Scheiman, Radiation-resistance of InGaP solar cells, Conference Record of 25th IEEE PVSC, 1996, pp. 163-166.