InGaP/GaAs tandem solar cells fabricated using solid-source molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 53, Issue 5 SPEC. ISSUE 1, 2014, Pages

  Sugaya, Takeyoshi ^a   Makita, Kikuo ^a   Takeda, Akihiro ^a,b   Oshima, Ryuji ^a   Matsubara, Koji ^a   Okano, Yoshinobu ^b   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; MOLECULAR BEAM EPITAXY; OPEN CIRCUIT VOLTAGE; TUNNEL JUNCTIONS;

ABSORPTION LAYER; GAAS; HIGH QUALITY; INGAP/GAAS; SOLID SOURCE MOLECULAR BEAM EPITAXY; SOLID SOURCES; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 84903315317     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.53.05FV06     Document Type: Conference Paper

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