Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers

Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 180-183

  Adamowicz, Boguslawa ^a,c   Hasegawa, Hideki ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b HOKKAIDO UNIVERSITY   (Japan)

^c NONE   (Poland)

Author keywords

AlGaAs photoluminescence; Passivation by interface control layer; Surface charge carriers recombination; Surface state density

Indexed keywords

EID: 0003012243     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00685-4     Document Type: Article

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