Improved conversion efficiency of a-Si:H/μc-Si:H thin-film solar cells by using annealed Al-doped zinc oxide as front electrode material

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 12, 2014, Pages 1285-1291

  Neubert, Sebastian ^a   Wimmer, Mark ^a   Ruske, Florian ^a   Calnan, Sonya ^a   Gabriel, Onno ^a   Stannowski, Bernd ^a   Schlatmann, Rutger ^a   Rech, Bernd ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

aluminum doped zinc oxide; annealing; high mobility; post deposition treatment; silicon thin film solar cells; transparent conducting oxide

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM COATINGS; ALUMINUM OXIDE; AMORPHOUS SILICON; ANNEALING; CONVERSION EFFICIENCY; DEPOSITION; EFFICIENCY; ELECTRODES; ENERGY GAP; HALL MOBILITY; HOLE MOBILITY; II-VI SEMICONDUCTORS; INFRARED DEVICES; MICROCRYSTALS; OPEN CIRCUIT VOLTAGE; OPTICAL FILMS; OXIDE MINERALS; THIN FILM SOLAR CELLS; THIN FILMS; TRANSPARENCY; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

AL-DOPED ZINC OXIDE; ALUMINUM-DOPED ZINC OXIDE; ELECTRODE MATERIAL; FREE CARRIER ABSORPTION; HIGH MOBILITY; POST DEPOSITION TREATMENT; SILICON THIN-FILM SOLAR CELLS; TANDEM SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 84912093485     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2389     Document Type: Article

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