Novel etch process to tune crater size on magnetron sputtered ZnO:Al

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 1, 2011, Pages 109-113

  Owen, Jorj I ^a   Hüpkes, Jürgen ^a   Zhu, Hongbing ^a   Bunte, Eerke ^a   Pust, Sascha E ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

etching; sputtering; texturization; ZnO

Indexed keywords

AL SAMPLE; CHEMICAL ETCH; CRATER SIZES; ETCH PROCESS; FEATURE SIZES; HCL SOLUTION; HIGH CONDUCTIVITY; HIGH RATE; HIGH TRANSPARENCY; LIGHT-TRAPPING; MAGNETRON-SPUTTERED ALUMINUM; POLYCRYSTALLINE ZNO; SCANNING ELECTRON MICROSCOPE; SILICON-BASED; SPUTTERING CONDITIONS; SURFACE FEATURE; TEXTURIZATION; THIN-FILM SOLAR CELLS; WINDOW LAYER; ZNO;

ALUMINUM; CHEMICAL MODIFICATION; ETCHING; HYDROCHLORIC ACID; MAGNETRONS; MICROCRYSTALLINE SILICON; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SOLAR CELLS;

ZINC OXIDE;

EID: 78651356861     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026164     Document Type: Article

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