Empirical determination of the energy band gap narrowing in p+ silicon heavily doped with boron

Journal of Applied Physics

Volumn 116, Issue 19, 2014, Pages

  Yan, Di ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; HALL MOBILITY; HOLE MOBILITY; SILICON;

BOLTZMANN STATISTICS; DEGENERACY EFFECT; FERMI-DIRAC STATISTICS; MINORITY-CARRIER MOBILITY; RECOMBINATION CURRENTS; STATISTICAL APPROACH; THEORETICAL MODELING; THEORETICAL SIMULATION;

ENERGY GAP;

EID: 84911899630     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4902066     Document Type: Article

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