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Volumn 4, Issue 16, 2014, Pages

A repeatable epitaxial lift-off process from a single GaAs substrate for low-cost and high-efficiency III-V solar cells

(10) Choi, Wonjung a Kim, Chang Zoo b Kim, Chang Su c Heo, Wooseok d Joo, Taiha d Ryu, Seung Yoon e Kim, Hogyoung f Kim, Hongjoon a Kang, Ho Kwan b Jo, Sungjin a

a Kyungpook National University (South Korea)

b Korea Advanced Nano Fab Center (KANC) (South Korea)

c Korea Institute of Material Science (South Korea)

d Pohang University of Science and Technology (POSTECH) (South Korea)

e SunMoon University (South Korea)

f Seoul National University of Science and Technology (South Korea)

Author keywords

compound semiconductors; epitaxial lift off; GaAs; multilayer structures; solar cells

Indexed keywords

COSTS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MULTILAYERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SOLAR POWER GENERATION;

COMPOUND SEMICONDUCTORS; EPITAXIAL LIFTOFF; EPITAXIAL MATERIALS; GAAS; III-V SOLAR CELLS; MULTILAYER STRUCTURES; PHOTOVOLTAIC PERFORMANCE; SOLAR CELL STRUCTURES;

SOLAR CELLS;

EID: 84911126958 PISSN: 16146832 EISSN: 16146840 Source Type: Journal
DOI: 10.1002/aenm.201400589 Document Type: Article

Times cited : (37)

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