Determining the electronic performance limitations in top-down-fabricated Si nanowires with mean widths down to 4 nm

Nano Letters

Volumn 14, Issue 11, 2014, Pages 6056-6060

  Mirza, Muhammad M ^a   Maclaren, Donald A ^a   Samarelli, Antonio ^a   Holmes, Barry M ^a   Zhou, Haiping ^a   Thoms, Stephen ^a   Macintyre, Douglas ^a   Paul, Douglas J ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

1D; 2D; 3D; electronic transport; scattering mechanisms; Silicon nanowire

Indexed keywords

SILICON;

1D; 2D; 3D; ELECTRONIC TRANSPORT; SCATTERING MECHANISMS; SILICON NANOWIRES;

NANOWIRES;

EID: 84910107388     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5015298     Document Type: Article

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