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Volumn 25, Issue 45, 2014, Pages

Mechanical and electronic properties of monolayer and bilayer phosphorene under uniaxial and isotropic strains

Author keywords

Electronic properties; Phosphorene; Strain

Indexed keywords

STRAIN;

EID: 84908543941     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/45/455703     Document Type: Article
Times cited : (96)

References (21)
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    • Rediscovering black phosphorus: A unique anisotropic 2D material for optoelectronics and electronics
    • Xia F, Wang H and Jia Y 2014 Rediscovering black phosphorus: a unique anisotropic 2D material for optoelectronics and electronics Nat. Commun. 5 4458
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    • Xia, F.1    Wang, H.2    Jia, Y.3
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    • Few-layer black phosphorus: Emerging direct band gap semiconductor with high carrier mobility
    • Qiao J, Kong X, Hu Z-X, Yang F and Ji W 2014 Few-layer black phosphorus: emerging direct band gap semiconductor with high carrier mobility Nat. Commun. 5 4475
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    • Qiao, J.1    Kong, X.2    Hu, Z.-X.3    Yang, F.4    Ji, W.5
  • 13
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    • Negative poisson's ratio in single-layer black phosphorus
    • Jiang J-W and Park H S 2014 Negative poisson's ratio in single-layer black phosphorus Nat. Commun. 5 4727
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    • Jiang, J.-W.1    Park, H.S.2
  • 14
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    • Strain-engineering anisotropic electrical conductance of phosphorene
    • Fei R and Yang L 2014 Strain-engineering anisotropic electrical conductance of phosphorene Nano Lett. 14 2884
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    • Fei, R.1    Yang, L.2
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    • Superior mechanical flexibility of phosphorene and few-layer black phosphorus
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    • Wei, Q.1    Peng, X.2
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    • Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
    • Peng X, Copple A and Wei Q 2014 Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene Phys. Rev. B 90 085402
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    • Peng, X.1    Copple, A.2    Wei, Q.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.