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Volumn 4, Issue 1, 2014, Pages 52-57

Application of ion implantation emitter in PERC solar cells

Author keywords

c Si; passivated emitter and rear cell (PERC); solar cell

Indexed keywords

AVERAGE EFFICIENCIES; C-SI; PASSIVATED EMITTER AND REAR CELL (PERC); PHOSPHOSILICATE GLASS; POSTIMPLANTATION ANNEALING; SOLAR CELL EFFICIENCIES; SOLAR CELL MANUFACTURING; SURFACE PASSIVATION;

EID: 84891555392     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2282893     Document Type: Article
Times cited : (9)

References (25)
  • 2
    • 84961587997 scopus 로고    scopus 로고
    • 19.2% efficient c-Si solar cells using ion implantation
    • presented at the Hangzhou, China, Nov. 05-09
    • J. Wu, X. Wang, and L. Zhang, "19.2% efficient c-Si solar cells using ion implantation," presented at the 22th Photovoltaic Sci. Eng. Conf., Hangzhou, China, Nov. 05-09 2012.
    • (2012) 22th Photovoltaic Sci. Eng. Conf.
    • Wu, J.1    Wang, X.2    Zhang, L.3
  • 5
    • 78650136975 scopus 로고    scopus 로고
    • Towards 19% efficient industrial PERC devices using simultaneous front emitter and rear surface passivation by thermal oxidation
    • Jun. 20-25
    • S. Mack, U. J̈ager, and G. K̈astner, "Towards 19% efficient industrial PERC devices using simultaneous front emitter and rear surface passivation by thermal oxidation," in Proc. 35th IEEE Photovoltaic Spec. Conf., Jun. 20-25, 2010, pp. 34-38.
    • (2010) Proc. 35th IEEE Photovoltaic Spec. Conf. , pp. 34-38
    • MacK, S.1    J̈ager, U.2    K̈astner, G.3
  • 6
    • 84865170964 scopus 로고    scopus 로고
    • Highefficiency large-area rear passivated silicon solar cells with local Al-BSF and screen-printed contacts
    • Jul.
    • J. Lai, A. Upadhyaya, S. Ramanathan, A. Das, and A. Rohatgi, "Highefficiency large-area rear passivated silicon solar cells with local Al-BSF and screen-printed contacts," IEEE J. Photovoltaics, vol. 1, no. 1, pp. 16-21, Jul. 2011.
    • (2011) IEEE J. Photovoltaics , vol.1 , Issue.1 , pp. 16-21
    • Lai, J.1    Upadhyaya, A.2    Ramanathan, S.3    Das, A.4    Rohatgi, A.5
  • 9
    • 84891557512 scopus 로고    scopus 로고
    • Ionimplanted PERC solar cells with Al2O3/SiNY rear passivation
    • presented at the Hamelin, Germany
    • T. Dullweber, V. Bhosle, R. Brendel, C. Dube, and R. Hesse, "Ionimplanted PERC solar cells with Al2O3/SiNY rear passivation," presented at the 3rd Silicon PV Conf., Hamelin, Germany, 2013.
    • (2013) 3rd Silicon PV Conf.
    • Dullweber, T.1    Bhosle, V.2    Brendel, R.3    Dube, C.4    Hesse, R.5
  • 12
    • 0022306789 scopus 로고
    • Measurement of the emitter saturation current by a contactless photoconductivity decay method
    • D. E. Kane and R. M. Swanson, "Measurement of the emitter saturation current by a contactless photoconductivity decay method," in Proc. 18th IEEE Photovoltaic Spec. Conf., Las Vegas, NV, USA, 1985, pp. 578-583. (Pubitemid 16627428)
    • (1985) Conference Record of the IEEE Photovoltaic Specialists Conference , pp. 578-583
    • Kane, D.E.1    Swanson, R.M.2
  • 13
    • 80053612169 scopus 로고    scopus 로고
    • Comparison of emitter saturation current densities determined by quasisteady-state photoconductance measurements of effective carrier lifetime at high and low injections
    • C. Reichel, F. Granek, J. Benick, O. Schultz-Wittmann, and S. W. Glunz, "Comparison of emitter saturation current densities determined by quasisteady-state photoconductance measurements of effective carrier lifetime at high and low injections," in Proc. 23th Eur. Photovoltaic Solar Energy Conf. Exhib., 2008, pp. 1664-1668.
    • (2008) Proc. 23th Eur. Photovoltaic Solar Energy Conf. Exhib. , pp. 1664-1668
    • Reichel, C.1    Granek, F.2    Benick, J.3    Schultz-Wittmann, O.4    Glunz, S.W.5
  • 15
    • 0015326966 scopus 로고
    • Kinetics of thermal growth of ultra-thin layers of SiO2 on silicon
    • Y. J. von der Meulen, "Kinetics of thermal growth of ultra-thin layers of SiO2 on silicon," J. Electrochem. Soc., vol. 119, no. 4, pp. 530-534, 1972.
    • (1972) J. Electrochem. Soc. , vol.119 , Issue.4 , pp. 530-534
    • Meulen Der Von, Y.J.1
  • 17
    • 0022160993 scopus 로고
    • Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime
    • H. Z. Massoud, J. D. Plummer, and E. A. Irene, "Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime," J. Electrochem. Soc., vol. 132, no. 11, pp. 2685-2693, 1985.
    • (1985) J. Electrochem. Soc. , vol.132 , Issue.11 , pp. 2685-2693
    • Massoud, H.Z.1    Plummer, J.D.2    Irene, E.A.3
  • 18
    • 84863709682 scopus 로고    scopus 로고
    • Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
    • G. Dingemans and W. M. M. Kessels, "Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells," J. Vac. Sci. Technol. A, vol. 30, no. 4, pp. 040802-1-040802-27, 2012.
    • (2012) J. Vac. Sci. Technol. A , vol.30 , Issue.4 , pp. 0408021-04080227
    • Dingemans, G.1    Kessels, W.M.M.2
  • 19
    • 0346215991 scopus 로고    scopus 로고
    • Coordination and interface analysis of atomic-layerdeposition Al2O3 on Si(001) using energy-loss near-edge structures
    • K. Kimoto, Y. Matsui, T. Nabatame, T. Yasuda, T. Mizoguchi, I. Tanaka, and A. Toriumi, "Coordination and interface analysis of atomic-layerdeposition Al2O3 on Si(001) using energy-loss near-edge structures," Appl. Phys. Lett., vol. 83, pp. 4306-4308, 2003.
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 4306-4308
    • Kimoto, K.1    Matsui, Y.2    Nabatame, T.3    Yasuda, T.4    Mizoguchi, T.5    Tanaka, I.6    Toriumi, A.7
  • 21
    • 33646386670 scopus 로고    scopus 로고
    • Property changes of aluminum oxide thin films deposited by atomic layer deposition under photon radiation
    • S. Y. No, D. Eom, C. S. Hwang, and H. J. Kim, "Property changes of aluminum oxide thin films deposited by atomic layer deposition under photon radiation," J. Electrochem. Soc., vol. 153, pp. F87-F93, 2006.
    • (2006) J. Electrochem. Soc. , vol.153
    • No, S.Y.1    Eom, D.2    Hwang, C.S.3    Kim, H.J.4
  • 22
    • 58149213837 scopus 로고    scopus 로고
    • On the c-Si surface passivation mechanism by the negative- chargedielectric Al2O3
    • B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, "On the c-Si surface passivation mechanism by the negative-chargedielectric Al2O3," J. Appl. Phys., vol. 104, pp. 113703-1-113703-7, 2008.
    • (2008) J. Appl. Phys. , vol.104 , pp. 1137031-1137037
    • Hoex, B.1    Gielis, J.J.H.2    Sanden De Van, M.M.C.3    Kessels, W.M.M.4
  • 23
    • 84861031442 scopus 로고    scopus 로고
    • Impact of thin intermediate thermal oxide films on the properties of PECVD passivation layer systems
    • presented at the Seattle, WA, USA
    • A.Wolf, S. Mack, C. Brosinsky, M. Hofmann, P. Saint-Cast, and D. Biro, "Impact of thin intermediate thermal oxide films on the properties of PECVD passivation layer systems," presented at the IEEE 37th Photovoltaic Spec. Conf., Seattle, WA, USA, 2011.
    • (2011) IEEE 37th Photovoltaic Spec. Conf.
    • Wolf, A.1    MacK, S.2    Brosinsky, C.3    Hofmann, M.4    Saint-Cast, P.5    Biro, D.6
  • 24
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of Auger recombination in crystalline silicon
    • M. J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon," J. App. Phys., vol. 91, no. 4, pp. 2473-2480, 2002.
    • (2002) J. App. Phys. , vol.91 , Issue.4 , pp. 2473-2480
    • Kerr, M.J.1    Cuevas, A.2
  • 25
    • 33947649632 scopus 로고
    • Auger recombination in silicon at low carrier densities
    • E. Yablonovitch and T. Gmitter, "Auger recombination in silicon at low carrier densities," Appl. Phys. Lett., vol. 49, pp. 587-589, 1986.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 587-589
    • Yablonovitch, E.1    Gmitter, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.