Lifetimes exceeding 1 ms in 1-Ω cm boron-doped Cz-silicon

Solar Energy Materials and Solar Cells

Volumn 131, Issue , 2014, Pages 51-57

  Walter, D C ^a   Lim, B ^a   Bothe, K ^a   Falster, R ^b   Voronkov, V V ^b   Schmidt, J ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b SUNEDISON   (United States)

Author keywords

Boron oxygen defect; Carrier lifetime; Permanent recovery; Rapid thermal annealing (RTA); Silicon

Indexed keywords

SILICON;

BORON-DOPED; BORON-OXYGEN DEFECTS; RAPID THERMAL ANNEALING (RTA);

CARRIER LIFETIME;

EID: 84908458499     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.06.011     Document Type: Article

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