Stability and surface reconstruction of topological insulator Bi2Se3 on exposure to atmosphere

Journal of Physical Chemistry C

Volumn 118, Issue 35, 2014, Pages 20413-20419

  Edmonds, Mark T ^a   Hellerstedt, Jack T ^a,b   Tadich, Anton ^c   Schenk, Alex ^d   Odonnell, Kane Michael ^c,e   Tosado, Jacob ^a,b   Butch, Nicholas P ^b,f   Syers, Paul ^b   Paglione, Johnpierre ^b   Fuhrer, Michael S ^a,b  

^a MONASH UNIVERSITY   (Australia)

^b UNIVERSITY OF MARYLAND   (United States)

^c AUSTRALIAN SYNCHROTRON   (Australia)

^d LA TROBE UNIVERSITY   (Australia)

^e CURTIN UNIVERSITY   (Australia)

^f NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; PHOTOELECTRON SPECTROSCOPY; SELENIUM COMPOUNDS; TOPOLOGICAL INSULATORS;

ATMOSPHERE EXPOSURE; HIGH RESOLUTION; IN-VACUUM; NEAR SURFACE REGIONS; RECONSTRUCTED SURFACES; ULTRAHIGH VACUUM CONDITIONS;

BISMUTH COMPOUNDS;

EID: 84908442068     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp506089b     Document Type: Article

References (27)

1. Hasan, M. Z.; Kane, C. L. Colloquium: Topological Insulators Rev. Mod. Phys. 2010, 82, 3045-3067
2. 3 with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 438-442
3. Fu, L.; Kane, C. L.; Mele, E. J. Topological Insulators in Three Dimensions Phys. Rev. Lett. 2007, 98, 106803-106806
4. R. Takahasi, R.; S. Murakami, S. Gapless Interface States between Topological Insulators with Opposite Dirac Velocities Phys. Rev. Lett. 2011, 107, 166805-166808
5. 3 Phys. Rev. B 2013, 88, 081108-081112(R)
6. 3 Infinitely Adaptive Superlattice Phase Phys. Rev. B 2012, 86, 241101-241105(R)
7. 3 Single Crystals J. Vac. Sci. Technol., B 2014, 32, 04E103-04E108
8. 3(0001) Cleaved Surface Cryst. Growth Des. 2011, 11, 5507-5514
9. 3 Investigated by Low Energy Ion Scattering Phys. Rev. Lett. 2013, 110, 156101-156105
10. 3(111) Determined by Low-Energy Electron Diffraction and Surface X-ray Diffraction Phys. Rev. B 2013, 88, 041404-041407(R)
11. 3 ACS Nano 2011, 5, 4698-4703
12. 3 towards Oxygen and Water ACS Nano 2013, 7, 5181-5191
13. 3 Topological Insulator J. Appl. Phys. 2012, 112, 113702-113706
14. 3 Topological Insulator Crystals Phys. Rev. B 2010, 81, 241301-241304(R)
15. 2 using Core-Level Photoelectron Spectroscopy and Scanning Tunneling Microscopy Phys. Rev. B 2013, 88, 245308-245314
16. 3 Using Molybdenum Trioxide into the Topological Regime ACS Nano 2014, 8, 6400-6406
17. http://srdata.nist.gov/xps/.
18. 3 Topological Insulator Phys. Rev. Lett. 2011, 107, 177602-177606
19. 3 Nat. Commun. 2010, 1, 128-132
20. Muntwiler, M.; Zhu, X.-Y. Image-Potential States on the Metallic (111) Surface of Bismuth New J. Phys. 2008, 10, 113018-113029
21. Zangwill, A. Physics at Surfaces; Cambridge University Press: New York, 1988.
22. Waitkins, G. R.; Shutt, R.; Kinney, I. W.; McReynolds, J. P. Inorganic Syntheses; Wiley Publishing: New York, 1946; Vol. 2.
23. 8+δ Phys. Rev. B 2011, 84, 165411-165416
24. Sakamoto, K.; Matsuhata, H.; Kyoya, K. I.; Miki, K.; Sakamoto, T. Abrupt Si/Ge/Si(001) Interfaces Fabricated with Bi as a Surfactant Jpn. J. Appl. Phys. 1994, 33, 2307-2310
25. Jun, S. W.; Fetzer, C. M.; Lee, R. T.; Shurtleff, J. K.; Stringfellow, G. B. Bi Surfactant Effects on Ordering in GaInP Grown by Organometallic Vapor-Phase Epitaxy Appl. Phys. Lett. 2000, 76, 2716-2718
26. 3 Phys. Rev. Lett. 2011, 107, 166801-166805
27. Murakami, S. Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling Phys. Rev. Lett. 2006, 97, 236805-236808