Characteristics of plasma polymerized low-dielectric constant SiCOH films deposited with tetrakis(trimethylsilyloxy)silane and cyclohexane precursors

Bulletin of the Korean Chemical Society

Volumn 35, Issue 10, 2014, Pages 2941-2944

  Kim, Hoonbae ^a   Oh, Hyojin ^b   Lee, Chaemin ^a   Jung, Donggeun ^a   Boo, Jin Hyo ^a  

^a Sungkyunkwan University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Elastic modulus; Fourier transform infrared spectroscopy; Hardness; Low dielectric constant; Plasma enhanced chemical vapor deposition

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; CYCLOHEXANE; DEPOSITION; ELASTIC MODULI; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; VAPOR DEPOSITION;

ELECTRICAL AND MECHANICAL PROPERTIES; HARDNESS AND ELASTIC MODULUS; LOW DIELECTRIC CONSTANTS; PLASMA POWER; RELATIVE DIELECTRIC CONSTANT; SICOH FILMS; TETRAKIS; THERMAL-ANNEALING;

DIELECTRIC MATERIALS;

EID: 84908367008     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2014.35.10.2941     Document Type: Article

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