Preparation and characterization of Nickel Oxide thin films by direct current reactive magnetron sputtering at different substrate temperatures

Electronic Materials Letters

Volumn 10, Issue 5, 2014, Pages 887-892

  Reddy, A Mallikarjuna ^a,b   Byun, Chang Woo ^b   Joo, Seung Ki ^b   Reddy, A Sivasankar ^c   Reddy, P Sreedhara ^a  

^a SRI VENKATESWARA UNIVERSITY   (India)

^b Seoul National University   (South Korea)

^c Kongju National University   (South Korea)

Author keywords

electrical properties; optical properties; reactive sputtering; structural and morphological properties; substrate temperature

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ENERGY GAP; HALL MOBILITY; HOLE MOBILITY; MAGNETRON SPUTTERING; NICKEL OXIDE; OPTICAL PROPERTIES; OXIDE FILMS; REACTIVE SPUTTERING; THIN FILMS;

CHARACTERIZATION METHODS; DC REACTIVE MAGNETRON SPUTTERING; DIFFERENT SUBSTRATES; NICKEL OXIDE THIN FILMS; REACTIVE MAGNETRON SPUTTERING; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; SUBSTRATE TEMPERATURE; X-RAY DIFFRACTION STUDIES;

FILM PREPARATION;

EID: 84907603903     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-014-2181-3     Document Type: Article

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