A nitrogen-treated memristive device for tunable electronic synapses

Semiconductor Science and Technology

Volumn 29, Issue 10, 2014, Pages

  Park, Sangsu ^a   Siddik, Manzar ^a   Noh, Jinwoo ^a   Lee, Daeseuk ^b   Moon, Kibong ^b   Woo, Jiyong ^b   Lee, Byoung Hun ^a   Hwang, Hyunsang ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

memristive device; neuromorphic device; resistive device

Indexed keywords

ELECTRODES; FLOW OF GASES; MODULATION; NITROGEN; REACTIVE SPUTTERING; SCHOTTKY BARRIER DIODES;

MEMRISTIVE DEVICE; NEUROMORPHIC; NITROGEN GAS FLOW; RESISTIVE DEVICE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; STORAGE CAPABILITY; TINX ELECTRODE;

MEMRISTORS;

EID: 84907193005     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/10/104006     Document Type: Article

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