Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 10-11, 2011, Pages 409-411

  Park, Sangsu ^a   Jung, Seungjae ^a   Siddik, Manzar ^a   Jo, Minseok ^a   Lee, Joonmyoung ^a   Park, Jubong ^a   Lee, Wootae ^a   Kim, Seonghyun ^a   Sadaf, Sharif Md ^a   Liu, Xinjun ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Memristive switching; Pr0.7Ca0.3MnO3; Resistance switching; X ray photoelectron spectroscopy

Indexed keywords

LAYER THICKNESS; LOW POWER; MEMORY DEVICE; MEMRISTIVE SWITCHING; NANOSCALED; OXYGEN MIGRATION; RESISTANCE SWITCHING; SWITCHING BEHAVIORS;

BEHAVIORAL RESEARCH; CALCIUM; MANGANESE OXIDE; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; X RAY PHOTOELECTRON SPECTROSCOPY;

SWITCHING;

EID: 80155156931     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105317     Document Type: Article

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