SCOPUS 정보 검색 플랫폼

Volumn 6, Issue 19, 2014, Pages 11232-11239

Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

(5) Das, K a Mukherjee, S b Manna, S b Ray, S K b Raychaudhuri, A K a

a S N BOSE NATIONAL CENTRE FOR BASIC SCIENCES (India)

b INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; INFRARED DETECTORS; LIGHT SOURCES; NANOWIRES; PHOTODETECTORS; PHOTONS; POLARIZATION;

DIAMETER DEPENDENT; METAL SEMICONDUCTOR METAL PHOTODETECTOR; METAL-ASSISTED CHEMICAL ETCHING; NEAR INFRARED PHOTODETECTORS; NEAR INFRARED REGION; OPTICAL SIMULATION; POLARIZATION SENSITIVE; SILICON NANOWIRES;

INFRARED DEVICES;

EID: 84907148369 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr03170a Document Type: Article

Times cited : (99)

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