Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

Physical Review B - Condensed Matter and Materials Physics

Volumn 90, Issue 11, 2014, Pages

  Rubel, O ^a,b   Bokhanchuk, A ^a   Ahmed, S J ^c   Assmann, E ^d  

^a Thunder Bay Regional Research Institute   (Canada)

^b LAKEHEAD UNIVERSITY   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84906993384     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.90.115202     Document Type: Article

References (53)

1. C. Freysoldt, B. Grabowski, T. Hickel, J. Neugebauer, G. Kresse, A. Janotti, and C. G. Van de Walle, Rev. Mod. Phys. 86, 253 (2014). RMPHAT 0034-6861 10.1103/RevModPhys.86.253
2. V. Popescu and A. Zunger, Phys. Rev. Lett. 104, 236403 (2010). PRLTAO 0031-9007 10.1103/PhysRevLett.104.236403
3. J. S. Faulkner and G. M. Stocks, Phys. Rev. B 21, 3222 (1980). PRBMDO 0163-1829 10.1103/PhysRevB.21.3222
4. P. J. Durham, J. Phys. F: Met. Phys. 11, 2475 (1981). JPFMAT 0305-4608 10.1088/0305-4608/11/11/027
5. S. Baroni, S. de Gironcoli, and P. Giannozzi, Phys. Rev. Lett. 65, 84 (1990). PRLTAO 0031-9007 10.1103/PhysRevLett.65.84
6. T. G. Dargam, R. B. Capaz, and B. Koiller, Phys. Rev. B 56, 9625 (1997). PRBMDO 0163-1829 10.1103/PhysRevB.56.9625
7. L.-W. Wang, L. Bellaiche, S.-H. Wei, and A. Zunger, Phys. Rev. Lett. 80, 4725 (1998). PRLTAO 0031-9007 10.1103/PhysRevLett.80.4725
8. T. B. Boykin and G. Klimeck, Phys. Rev. B 71, 115215 (2005). PRBMDO 1098-0121 10.1103/PhysRevB.71.115215
9. C.-C. Lee, Y. Yamada-Takamura, and T. Ozaki, J. Phys.: Condens. Matter 25, 345501 (2013). JCOMEL 0953-8984 10.1088/0953-8984/25/34/345501
10. F. Giustino, J. R. Yates, I. Souza, M. L. Cohen, and G. Louie, Phys. Rev. Lett. 98, 047005 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.98.047005
11. W. Ku, T. Berlijn, and C.-C. Lee, Phys. Rev. Lett. 104, 216401 (2010). PRLTAO 0031-9007 10.1103/PhysRevLett.104.216401
12. S. Konbu, K. Nakamura, H. Ikeda, and R. Arita, J. Phys. Soc. Jpn. 80, 123701 (2011). JUPSAU 0031-9015 10.1143/JPSJ.80.123701
13. T. Berlijn, D. Volja, and W. Ku, Phys. Rev. Lett. 106, 077005 (2011). PRLTAO 0031-9007 10.1103/PhysRevLett.106.077005
14. T. Berlijn, C.-H. Lin, W. Garber, and W. Ku, Phys. Rev. Lett. 108, 207003 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.108.207003
15. T. Berlijn, P. J. Hirschfeld, and W. Ku, Phys. Rev. Lett. 109, 147003 (2012). PRLTAO 0031-9007 10.1103/PhysRevLett.109.147003
16. S. Konbu, K. Nakamura, H. Ikeda, and R. Arita, Solid State Commun. 152, 728 (2012). SSCOA4 0038-1098 10.1016/j.ssc.2011.12.048
17. T. Berlijn, H.-P. Cheng, P. J. Hirschfeld, and W. Ku, Phys. Rev. B 89, 020501 (2014). PRBMDO 1098-0121 10.1103/PhysRevB.89.020501
18. M. W. Haverkort, I. S. Elfimov, and G. A. Sawatzky, arXiv:1109.4036 [cond-mat.mtrl-sci].
19. V. Popescu and A. Zunger, Phys. Rev. B 85, 085201 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.85.085201
20. P. B. Allen, T. Berlijn, D. A. Casavant, and J. M. Soler, Phys. Rev. B 87, 085322 (2013). PRBMDO 1098-0121 10.1103/PhysRevB.87.085322
21. P. V. C. Medeiros, S. Stafström, and J. Björk, Phys. Rev. B 89, 041407 (2014). PRBMDO 1098-0121 10.1103/PhysRevB.89.041407
22. P. Blaha, K. Schwarz, G. K. H. Madsen, D. Kvasnicka, and J. Luitz, wien2k: An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties, Karlheinz Schwarz, Techn. Universität Wien, Austria, 2001.
23. M. Chen and M. Weinert, Nano Lett., doi: 10.1021/nl502107v.
24. M. Kondow, K. Uomi, T. Kitatani, S. Watahiki, and Y. Yazawa, J. Cryst. Growth 164, 175 (1996). JCRGAE 0022-0248 10.1016/0022-0248(96)00008-5
25. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys. 35, 1273 (1996). JAPLD8 0021-4922 10.1143/JJAP.35.1273
26. W. Shan, W. Walukiewicz, J. W. Ager, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999). PRLTAO 0031-9007 10.1103/PhysRevLett.82.1221
27. D. G. Thomas and J. J. Hopfield, Phys. Rev. 150, 680 (1966). PHRVAO 0031-899X 10.1103/PhysRev.150.680
28. P. R. C. Kent and A. Zunger, Phys. Rev. B 64, 115208 (2001). PRBMDO 1098-0121 10.1103/PhysRevB.64.115208
29. W. O. Groves, A. H. Herzog, and M. G. Craford, US Patent No. 3,725,749 (1973).
30. I. A. Buyanova and W. M. Chen, Physics and Applications of Dilute Nitrides (Taylor & Francis, London, 2004), Chap. Recombination processes in dilute nitrides, pp. 255-280.
31. O. Rubel, S. D. Baranovskii, K. Hantke, B. Kunert, W. W. Ruhle, P. Thomas, K. Volz, and W. Stolz, Phys. Rev. B 73, 233201 (2006). 10.1103/PhysRevB.73.233201
32. S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information (Springer, New York, 1999).
33. W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). PHRVAO 0031-899X 10.1103/PhysRev.140.A1133
34. T. Niebling, O. Rubel, W. Heimbrodt, W. Stolz, S. D. Baranovskii, P. J. Klar, and J. F. Geisz, J. Phys.: Condens. Matter 20, 015217 (2008). JCOMEL 0953-8984 10.1088/0953-8984/20/01/015217
35. B. Kunert, K. Volz, J. Koch, and W. Stolz, Appl. Phys. Lett. 88, 182108 (2006). 10.1063/1.2200758
36. K. M. Yu, W. Walukiewicz, J. W. Ager, D. Bour, R. Farshchi, O. D. Dubon, S. X. Li, I. D. Sharp, and E. E. Haller, Appl. Phys. Lett. 88, 092110 (2006). APPLAB 0003-6951 10.1063/1.2181627
37. A. Zunger, S.-H. Wei, L. G. Ferreira, and J. E. Bernard, Phys. Rev. Lett. 65, 353 (1990). PRLTAO 0031-9007 10.1103/PhysRevLett.65.353
38. S. Francoeur, M.-J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, and T. Tiedje, Appl. Phys. Lett. 82, 3874 (2003). APPLAB 0003-6951 10.1063/1.1581983
39. K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis, and A. Krotkus, Appl. Phys. Lett. 91, 051909 (2007). APPLAB 0003-6951 10.1063/1.2768312
40. H.-X. Deng, J. Li, S.-S. Li, H. Peng, J.-B. Xia, L.-W. Wang, and S.-H. Wei, Phys. Rev. B 82, 193204 (2010). PRBMDO 1098-0121 10.1103/PhysRevB.82.193204
41. A. Janotti, S.-H. Wei, and S. B. Zhang, Phys. Rev. B 65, 115203 (2002). PRBMDO 0163-1829 10.1103/PhysRevB.65.115203
42. S. Küfner, J. Furthmüller, L. Matthes, and F. Bechstedt, Nanotechnology 24, 405702 (2013). NNOTER 0957-4484 10.1088/0957-4484/24/40/405702
43. Z. Batool, S. Chatterjee, A. Chernikov, A. Duzik, R. Fritz, C. Gogineni, K. Hild, T. J. C. Hosea, S. Imhof, S. R. Johnson, Molecular Beam Epitaxy: From Research to Mass Production (Elsevier, Amsterdam, 2013), Chap. Bismuth-containing IIIeV semiconductors: Epitaxial growth and physical properties, pp. 139-158.
44. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010). RMPHAT 0034-6861 10.1103/RevModPhys.82.3045
45. W. Zawadzki, Adv. Phys. 23, 435 (1974). ADPHAH 0001-8732 10.1080/00018737400101371
46. E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957). JPCSAW 0022-3697 10.1016/0022-3697(57)90013-6
47. M. Orlita, D. M. Basko, M. S. Zholudev, F. Teppe, W. Knap, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, P. Neugebauer, C. Faugeras, Nat. Phys. 10, 233 (2014). 1745-2473 10.1038/nphys2857
48. A. Rogalski, Rep. Prog. Phys. 68, 2267 (2005). RPPHAG 0034-4885 10.1088/0034-4885/68/10/R01
49. F. Tran and P. Blaha, Phys. Rev. Lett. 102, 226401 (2009). PRLTAO 0031-9007 10.1103/PhysRevLett.102.226401
50. S. Fahy and E. P. O'Reilly, Appl. Phys. Lett. 83, 3731 (2003). APPLAB 0003-6951 10.1063/1.1622444
51. D. D. Edwall, M. Zandian, A. C. Chen, and J. M. Arias, J. Electron. Mater. 26, 493 (1997). JECMA5 0361-5235 10.1007/s11664-997-0183-8
52. S. D. Yoo and K. D. Kwack, J. Appl. Phys. 81, 719 (1997). JAPIAU 0021-8979 10.1063/1.364212
53. J. P. Perdew and Y. Wang, Phys. Rev. B 45, 13244 (1992). PRBMDO 0163-1829 10.1103/PhysRevB.45.13244