Sputtering deposition of P-type SnO films with SnO2 target in hydrogen-containing atmosphere

ACS Applied Materials and Interfaces

Volumn 6, Issue 16, 2014, Pages 13724-13729

  Hsu, Po Ching ^a   Hsu, Chao Jui ^a   Chang, Ching Hsiang ^a   Tsai, Shiao Po ^a   Chen, Wei Chung ^a   Hsieh, Hsing Hung ^b,c   Wu, Chung Chih ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

^c Polyera Taiwan Corp   (Taiwan)

Author keywords

oxide semiconductor; p type; reactive sputtering; thin film transistor; tin monoxide; tin oxide

Indexed keywords

HALL MOBILITY; HYDROGEN; OXIDE SEMICONDUCTORS; REACTIVE SPUTTERING; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; TIN OXIDES;

P TYPE CONDUCTIVITY; P-TYPE; POLYCRYSTALLINE; REDUCING ATMOSPHERE; REDUCTION REACTION; SPUTTERING DEPOSITION; SPUTTERING GAS; TIN MONOXIDES;

PHOSPHORUS COMPOUNDS;

EID: 84906819181     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5031787     Document Type: Article

References (25)

1. Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 2004, 432, 488-492
2. Yabuta, H.; Sano, M.; Abe, K.; Aiba, T.; Den, T.; Kumomi, H.; Nomura, K.; Kamiya, T.; Hosono, H. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering Appl. Phys. Lett. 2006, 89 (112123) 1-3
3. Fortunato, E.; Barquinha, P.; Martins, R. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances Adv. Mater. 2012, 24, 2945-2986
4. Kawazoe, H.; Yasukawa, M.; Hyodo, H.; Kurita, M.; Yanagi, H.; Hosono, H. P-type electrical conduction in transparent thin films of CuAlO2 Nature 1997, 389, 939-942
5. Kudo, A.; Yanagi, H.; Hosono, H.; Kawazoe, H. SrCu2O2: A p-type conductive oxide with wide band gap Appl. Phys. Lett. 1998, 73, 220-222
6. Sato, H.; Minami, T.; Takata, S.; Yamada, T. Transparent conducting p-type Nio thin-films prepared by magnetron sputtering Thin Solid Films 1993, 236, 27-31
7. Musa, A. O.; Akomolafe, T.; Carter, M. J. Production of cuprous oxide, a solar cell material, by thermal oxidation and a study of its physical and electrical properties Sol. Energy Mater. Sol. Cells 1998, 51, 305-316
8. Pan, X. Q.; Fu, L. Tin Oxide Thin Films Grown on the (̄1012) Sapphire Substrate J. Electroceram. 2001, 7, 35-46
9. Chang, P. C.; Fan, Z. Y.; Tseng, W. Y.; Rajagopal, A.; Lu, J. G. β-Ga2O3 nanowires: Synthesis, characterization, and p-channel field-effect transistor Appl. Phys. Lett. 2005, 87 (222102) 1-3
10. Shimotani, H.; Suzuki, H.; Ueno, K.; Kawasaki, M.; Iwasa, Y. p-type field-effect transistor of NiO with electric double-layer gating Appl. Phys. Lett. 2008, 92 (242107) 1-3
11. Matsuzaki, K.; Nomura, K.; Yanagi, H.; Kamiya, T.; Hirano, M.; Hosono, H. Epitaxial growth of high mobility Cu2O thin films and application to p -channel thin film transistor Appl. Phys. Lett. 2008, 93 (202107) 1-3
12. Ogo, Y.; Hiramatsu, H.; Nomura, K.; Yanagi, H.; Kamiya, T.; Hirano, M.; Hosono, H. p -channel thin-film transistor using p-type oxide semiconductor, SnO Appl. Phys. Lett. 2008, 93 (032113) 1-3
13. Ogo, Y.; Hiramatsu, H.; Nomura, K.; Yanagi, H.; Kamiya, T.; Kimura, M.; Hirano, M.; Hosono, H. Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application Phys. Status Solidi A 2009, 206, 2187-2191
14. Fortunato, E.; Barros, R.; Barquinha, P.; Figueiredo, V.; Park, S. H. K.; Hwang, C. S.; Martins, R. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing Appl. Phys. Lett. 2010, 97 (052105) 1-3
15. Yabuta, H.; Kaji, N.; Hayashi, R.; Kumomi, H.; Nomura, K.; Kamiya, T.; Hirano, M.; Hosono, H. Sputtering formation of p -type SnO thin-film transistors on glass toward oxide complimentary circuits Appl. Phys. Lett. 2010, 97 (072111) 1-3
16. Hsu, P. C.; Chen, W. C.; Tsai, Y. T.; Kung, Y. C.; Chang, C. H.; Hsu, C. J.; Wu, C. C.; Hsieh, H. H. Fabrication of p-Type SnO Thin-Film Transistors by Sputtering with Practical Metal Electrodes Jpn. J. Appl. Phys. 2013, 52 (05DC07) 1-6
17. Hosono, H.; Ogo, Y.; Yanagi, H.; Kamiya, T. Bipolar Conduction in SnO Thin Films Electrochem. Solid-State Lett. 2011, 14, H13-H16
18. Batzill, M.; Diebold, U. The surface and materials science of tin oxide Prog. Surf. Sci. 2005, 79, 47-154
19. Luo, H.; Liang, L. Y.; Cao, H. T.; Liu, Z. M.; Zhuge, F. Structural, Chemical, Optical, and Electrical Evolution of SnOx Films Deposited by Reactive rf Magnetron Sputtering ACS Appl. Mater. Interfaces 2012, 4, 5673-5677
20. Kover, L.; Kovacs, Z.; Sanjines, R.; Moretti, G.; Cserny, I.; Margaritondo, G.; Palinkas, J.; Adachi, H. Electronic-Structure of Tin Oxides: High-Resolution Study of Xps and Auger-Spectra Surf. Interface Anal. 1995, 23, 461-466
21. Zhang, K. R.; Zhu, F. R.; Huan, C. H. A.; Wee, A. T. S. Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method J. Appl. Phys. 1999, 86, 974-980
22. Zhang, K.; Zhu, F. R.; Huan, C. H. A.; Wee, A. T. S. Indium tin oxide films prepared by radio frequency magnetron sputtering method at a low processing temperature Thin Solid Films 2000, 376, 255-263
23. Hishikawa, Y.; Nakamura, N.; Tsuda, S.; Nakano, S.; Kishi, Y.; Kuwano, Y. Interference-Free Determination of the Optical-Absorption Coefficient and the Optical Gap of Amorphous-Silicon Thin-Films Jpn. J. Appl. Phys. 1991, 30, 1008-1014
24. Melsheimer, J.; Ziegler, D. Band-Gap Energy and Urbach Tail Studies of Amorphous, Partially Crystalline and Polycrystalline Tin Dioxide Thin Solid Films 1985, 129, 35-47
25. Granato, D. B.; Caraveo-Frescas, J. A.; Alshareef, H. N.; Schwingenschlogl, U. Enhancement of p-type mobility in tin monoxide by native defects Appl. Phys. Lett. 2013, 102 (212105) 1-4