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Japanese Journal of Applied Physics

Volumn 52, Issue 1 PART2, 2013, Pages

Electrical properties of ZnO-doped Nd(Co1/2Ti 1/2)O3 thin films prepared by RF magnetron sputtering

(2) Hsu, Cheng Hsing a He, Yi Da a

a NATIONAL UNITED UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITED FILMS; DISSIPATION FACTORS; ELECTRICAL FIELD; ELECTRICAL PROPERTIES AND MICROSTRUCTURE; INDIUM TIN OXIDE; POLYCRYSTALLINE MICROSTRUCTURE; RF-MAGNETRON SPUTTERING; RF-POWER; SUBSTRATE SURFACE;

COBALT; FILM PREPARATION; MAGNETRON SPUTTERING; MICROSTRUCTURE; NEODYMIUM; NITRIDES; SUBSTRATES; THIN FILMS; TIN; TIN OXIDES; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84872846012 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.01AC01 Document Type: Article

Times cited : (11)

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